Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers

Abstract

The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the magnesium-related level on the transport properties. Two peaks, whose height and position depend on the measurement temperature, are observed in the admittance curves (G/ω versus frequency) of the Mg-doped samples, whereas only one peak appears in undoped samples. The study of the frequency dependence of the impedance, with a model including the two metallic Au/GaN junctions, the GaN layer itself, shows that, besides the effect of the differential resistance of the layer which plays a role in both sample types, the presence of a Mgrelated deep level contributes to the observed variations of the peaks in the admittance curves of the p-doped samples. Results of a theoretical steady-state and small-signal analysis based on numerical modelling of the Au/ GaN/Au heterostructure complete our analysis.

Investigation of Defect Levels in Mg-Doped GaN Schottky Structures by Thermal Admittance Spectroscopy

“…Epitaxial growth by metalorganic chemical vapor deposition (MOCVD) of the GaN layers studied in this work has been detailed elsewhere [1]. The structures consist of a nucleation layer grown directly on top of the sapphire substrate, followed by a 1 µm thick undoped buffer layer and a 2 µm thick Mg-doped layer.…”