Experimental and theoretical investigation on the relationship between AIN properties and AIN-based FBAR characteristics

Jung, Jun-Phil; Lee, Jin-Bock; Lee, Myungho; Park, Jin-Seok

doi:10.1109/freq.2003.1275191

Cited by 7 publications

(4 citation statements)

References 12 publications

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“…This enhancement in the crystalline quality of AlN adopted in device 2 can be attributed to the better match between AlN cell lattice and Si cell lattice. The comparison of the FWHM of AlN XRC with other work results is shown in figure 3(d) [14,17,18,22,[30][31][32][33][34].…”

Section: Resultsmentioning

confidence: 77%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Qm from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.

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Section: Resultsmentioning

confidence: 77%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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show abstract

“…Consequently, the quality of the piezoelectric films deposited on Mo may also be compromised. It is well-established that highly c-axis oriented thin films can be grown on substrates with sufficiently smooth surface roughness [29,31,44]. Therefore, the worse FWHM for ScAlN deposited on Si/SiO 2 /AlN/Mo functional layers can be attributed to the larger RMS of SiO 2 prepared in this work.…”

Section: Methodsmentioning

confidence: 74%

“…The deterioration in crystalline quality observed in sample 2 can be attributed to the considerable surface roughness of the metal layer [29,39]. In addition, many studies have shown that the FWHM of AlN deteriorates as the roughness of its growth substrate increases [40][41][42][43].…”

Section: Methodsmentioning

confidence: 95%

“…Furthermore, extensive research has been conducted on the deposition of AlN thin films on silicon substrates. For instance, Jung et al observed a significant disparity in the FWHM values between the AlN/Mo/Si film (10.62 • ) and the AlN/Si film (3.81 • ) [29]. Abd Allah et al directly deposited AlN on silicon and prepared a solidly mounted resonator with a Q-value of 1294 [30].…”

Section: Introductionmentioning

confidence: 99%

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A scandium doped aluminum nitride thin film bulk acoustic resonator

Gao,

Wang,

Cai

et al. 2024

J. Micromech. Microeng.

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Currently, we stand at the forefront of revolutionary advancements in communication technology. The escalating demands of advanced communication necessitate enhanced performance from materials and radio frequency (RF) devices. This paper aims to enhance film performance by depositing scandium-doped aluminum nitride (ScAlN) directly onto a Si substrate. Additionally, ScAlN was deposited on SiO2/AlN/Mo functional layers for comparison purposes. The ScAlN directly deposited on Si demonstrated superior performance in terms of crystalline quality and surface roughness, with a full width at half maximum (FWHM) of 1.7° and a roughness of 1.76 nm. Furthermore, a film bulk acoustic resonator (FBAR) based on the ScAlN film directly deposited on Si was successfully fabricated through thin-film transfer, with critical processes achieved via bonding and wet-etching of the substrate. The ScAlN in the fabricated resonator exhibited a favorable c-axis preferred orientation. The resulting ScAlN-based FBAR displayed a quality factor of 429. This study lays the groundwork for exciting opportunities in the development of higher-performance piezoelectric materials and devices.

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Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

Reusch

Cherneva

et al. 2017

Applied Surface Science

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Experimental and theoretical investigation on the relationship between AIN properties and AIN-based FBAR characteristics

Cited by 7 publications

References 12 publications

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

A scandium doped aluminum nitride thin film bulk acoustic resonator

Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

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