High-Q film bulk acoustic resonator with high quality AlN film based on transfer method
Yaxin Wang,
Chao Gao,
Chaoxiang Yang
et al.
Abstract:Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabricatio… Show more
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