Experimental and theoretical analysis of magnetic moment enhancement in oxygen-deficient EuO

Barbagallo, M.; Hine, Nicholas D. M.; Cooper, Joshaniel F. K.; Steinke, Nina‐Juliane; Ionescu, Adrian M.; Barnes, C. H. W.; Kinane, C. J.; Dalgliesh, R. M.; Charlton, Timothy; Langridge, S.

doi:10.1103/physrevb.81.235216

Cited by 40 publications

(34 citation statements)

References 42 publications

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“…The binding energy of the O states is consistent with GW calculations, 37 while LSDA or LSDA + U calculations place the binding energy of the O states significantly closer to the Fermi level. 11,15,16,[37][38][39][40][41][42] The binding energies of Eu 4f and oxygen 2p orbitals are also consistent with previous photoemission studies of undoped EuO films. [38][39][40][41][42][43][44][45] The splitting of the Eu 4f states in the photoemission spectra has been previously reported, 42 and in those high-resolution photoemission studies, the splitting was clearly resolved at the surface Brillouin-zone center ( ) for undoped EuO(100).…”

Section: Valence-band Electronic Structuresupporting

confidence: 77%

“…1,2 Stoichiometric EuO has a Curie temperature (T C ) of 69 K, which is strongly enhanced by electron doping via rare-earth substitution [3][4][5][6][7][8] or oxygen vacancies. 4,[7][8][9][10][11] Furthermore, such doping can tune the conductivity of EuO to match that of silicon. 3,12,13 Epitaxial or very strongly textured EuO(100) films can be grown on Si(100) wafers with a high quality EuO/Si interface.…”

Section: Introductionmentioning

confidence: 99%

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Effect of gadolinium doping on the electronic band structure of europium oxide

Santana

et al. 2012

Phys. Rev. B

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B.; Yakovkin, I. N.; and Dowben, Peter A., "Effect of gadolinium doping on the electronic band structure of europium oxide" (2012 [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.

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Section: Valence-band Electronic Structuresupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Effect of gadolinium doping on the electronic band structure of europium oxide

Santana

et al. 2012

Phys. Rev. B

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“…(5) seem to be valid for weak exchange potentials smaller than the gap size of TI. However, the typical gap size in TI is 100 meV 4,26,27 , whereas the gap of FI is of the order of eV [28][29][30][31] . Thus the low energy electronic states around the gap of TI should be studied by using more realistic theoretical model.…”

Section: Effective Theory Around the Dirac Pointmentioning

confidence: 99%

Interface metallic states between a topological insulator and a ferromagnetic insulator

Habe

Asano

2012

Phys. Rev. B

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We study electronic structures at an interface between a topological insulator and a ferromagnetic insulator by using three-dimensional two-band model. In usual ferromagnetic insulators, the exchange potential is much larger than the bulk gap size in the topological insulators and electronic structures are asymmetric with respect to the fermi level. In such situation, we show that unusual metallic states appear under the magnetic moment pointing the perpendicular direction to the junction plane, which cannot be described by the two-dimensional effective model around the Dirac point. When the magnetic moment is in the parallel direction to the plane, the number of Dirac cones becomes even integers. The conclusions obtained in analytical calculations are confirmed by numerical simulations on tight-binding lattice.

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“…9 Alternatively, the T C can be increased by deliberately making oxygen-deficient EuO such that the resulting oxygen vacancies donate an electron. 6,[18][19][20][21][22] In the cationdoped EuO films, an unknown and uncontrolled concentration of oxygen vacancies is often included, which may be responsible for the disparate results for the dependence of T C on cation doping. For example, in films doped with gadolinium, the maximum reported T C varies between 120 K (Ref.…”

mentioning

confidence: 99%

Lutetium-doped EuO films grown by molecular-beam epitaxy

Melville

Mairoser

Schmehl

et al. 2012

Applied Physics Letters

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The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

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Experimental and theoretical analysis of magnetic moment enhancement in oxygen-deficient EuO

Cited by 40 publications

References 42 publications

Effect of gadolinium doping on the electronic band structure of europium oxide

Effect of gadolinium doping on the electronic band structure of europium oxide

Interface metallic states between a topological insulator and a ferromagnetic insulator

Lutetium-doped EuO films grown by molecular-beam epitaxy

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