Experimental and Modelling Investigation of Re-Adhesion Mechanism of Detached Nanoparticles to Wafer Surface in Spin Rinse Process

Handa, Naoyuki; Hiyama, Hirokuni; Amagai, Kenji; Yano, Ayako

doi:10.1149/2162-8777/ab9fe9

Cited by 5 publications

(10 citation statements)

References 16 publications

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“…As noted above, a previous study revealed that the number of particles readhering to the wafer depended on the Sherwood number, which is a dimensionless number used in mass transfer operations. 12 Here, it was found that the readhesion particles could not be removed from the wafer or the vicinity of the wafer when the liquid type in step 1 was DIW. 12 While it was considered that the number of readhering particles would vary depending on the zeta potential, the effect of the interaction between the particle and the wafer in relation to the zeta potential could not be considered in the previous model.…”

Section: Discussionmentioning

confidence: 91%

“…12 Here, it was found that the readhesion particles could not be removed from the wafer or the vicinity of the wafer when the liquid type in step 1 was DIW. 12 While it was considered that the number of readhering particles would vary depending on the zeta potential, the effect of the interaction between the particle and the wafer in relation to the zeta potential could not be considered in the previous model. 12 Therefore, with reference to the DLVO theory and the theory of Brownian motion near the wall, the effect of the zeta potential was incorporated into the model.…”

Section: Discussionmentioning

confidence: 91%

“…Even if the particles do not adhere to the wafer, it will be difficult to remove them near the wafer surface in the spin-rinse process since the liquid velocity near the solid surface is typically low due to viscosity. 12 In our previous study, the mechanism of readhesion of detached nanoparticles to the wafer surface was investigated by comparing the experimental and modeling results. 12 In the model, the number of particles readhering to the wafer surface depended on the Sherwood number, which is a dimensionless number used in mass transfer operations.…”

mentioning

confidence: 99%

“…12 In our previous study, the mechanism of readhesion of detached nanoparticles to the wafer surface was investigated by comparing the experimental and modeling results. 12 In the model, the number of particles readhering to the wafer surface depended on the Sherwood number, which is a dimensionless number used in mass transfer operations. It is assumed that all particles approaching the wafer surface adhere to the wafer since the repulsion force is low due to the deionized water (DIW) rinse.…”

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confidence: 99%

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Experimental and Modeling Investigation of the Mechanism for Preventing Readhesion via Zeta Potential in the Spin-Rinse Process

Handa¹,

Hiyama²,

Amagai³

et al. 2021

ECS J. Solid State Sci. Technol.

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Adhesive particles on polished wafers are detached via, for example, scrubbing, and removed via liquid flow from the wafer while preventing readhesion by controlling the zeta potential. However, the effect of the zeta potential on the removal of detached particles in the spin-rinse process is yet to be quantitatively examined. Therefore, a physical model was constructed with some consideration of the zeta potential effect and was subsequently compared with the experimental results. According to the Derjaguin–Landau–Verwey–Overbeek theory, particle displacement in the direction normal to the wafer surface can be calculated from the energy that is mainly determined by the repulsive force depending on the zeta potential. Assuming that the particle displacement distribution takes the form of a Gaussian distribution, the ratio of particles present in the direction normal to the wafer surface can be expressed and the zeta potential effect could be incorporated into the model. Furthermore, assuming that the detached particles are removed from the wafer not only during the spin-rinse process but also during the spin-drying process, the model was in line with the experiment. It was found that the detached particles are removed from the wafer during both the spin-rinse process and the spin-drying process.

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Section: Discussionmentioning

confidence: 91%

Section: Discussionmentioning

confidence: 91%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Experimental and Modeling Investigation of the Mechanism for Preventing Readhesion via Zeta Potential in the Spin-Rinse Process

Handa¹,

Hiyama²,

Amagai³

et al. 2021

ECS J. Solid State Sci. Technol.

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“…Thin-liquid-film flows are frequently encountered in various industrial applications such as steam turbines for power generation (Baumann, 1921;Kawagishi et al, 2011), chemical reaction devices such as falling film evaporators (Li et al, 2016), and single-wafer cleaning in semiconductor-device manufacturing (Handa et al, 2020). Moreover, the film thickness is directly related to the safety, efficiency, and yield improvement of these devices.…”

Section: Introductionmentioning

confidence: 99%

Accurate thin-film measurement method based on a distribution of laser intensity emitted from optical fiber: Proposal of step light emitted model for ray-tracing simulation

Yamaguchi

Sanada

Mizushima

2020

Mechanical Engineering Letters

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The accurate measurement of thin liquid films in various environments is essential for several industrial applications. In this regard, measurement procedures involving the use of optical fibers are preferred because such fibers are resistant to heat and pressure. Herein, we propose a high-accuracy method to measure liquid films with thicknesses of <100 μm (about fiber diameter) on the basis of the variation in the intensity distribution of the laser light emitted from the optical fiber; the thickness is measured by using the light reflected from the airliquid interface (called the glare light in this study). First, instead of using light with a Gaussian distribution (characteristic of conventional graded-index fibers), we consider a stepped-index-type optical fiber with a step distribution. We model the distribution of the light emitted from the optical fiber and analyze the reflected light, i.e., glare light, via the ray-tracing method. We model three distributions: the Gaussian, point-like, and step distributions, and then we found that the step-distribution-based approach facilitates high-resolution measurements of liquid films with thicknesses less than optical fiber diameter. Moreover, the reflected light intensities for different film thicknesses closely agreed with the experimental results obtained using a steppedindex fiber. Remarkably, the intensity of the reflected light linearly decreases with the increase in the film thickness when using the step distribution. The numerical results quantitatively agreed with experiments; therefore, these results indicate the possibility of numerical calibration for liquid-film measurements with the use of the proposed step distribution model.

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Atomic-scale study on particle movement mechanism during silicon substrate cleaning using ReaxFF MD

Zeng

Zhao

et al. 2022

Computational Materials Science

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Experimental and Modelling Investigation of Re-Adhesion Mechanism of Detached Nanoparticles to Wafer Surface in Spin Rinse Process

Cited by 5 publications

References 16 publications

Experimental and Modeling Investigation of the Mechanism for Preventing Readhesion via Zeta Potential in the Spin-Rinse Process

Experimental and Modeling Investigation of the Mechanism for Preventing Readhesion via Zeta Potential in the Spin-Rinse Process

Accurate thin-film measurement method based on a distribution of laser intensity emitted from optical fiber: Proposal of step light emitted model for ray-tracing simulation

Atomic-scale study on particle movement mechanism during silicon substrate cleaning using ReaxFF MD

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