Experimental and direct numerical analysis of hard-disk drive

Segu, Dawit Zenebe; Khan, Polina V.; Hwang, Pyung

doi:10.1007/s12206-018-0402-7

Cited by 10 publications

(2 citation statements)

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“…The magnetic tunnel junction (MTJ) usually has a large tunnel magnetoresistance (TMR) value and has become a key component of many advanced magnetic devices, such as the read heads in hard-disk drives [1][2][3][4], magnetoresistive random access memories [5], and the next generation of high-density, nonvolatile memories and logic devices [6][7][8][9][10] The core component of MTJ is a "sandwich" stack usually consisting of two ferromagnetic layers and a seeding layer. The direction of the two magnetizations of the ferromagnetic layers can be switched individually by an external magnetic field.…”

Section: Introductionmentioning

confidence: 99%

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Structure, Magnetism, and Electronic Properties of Inverse Heusler Alloy Ti2CoAl/MgO(100) Herterojuction: The Role of Interfaces

Huang

Zhou

et al. 2018

Applied Sciences

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In this study, the interface structures, atom-resolved magnetism, density of states, and spin polarization of 10 possible atomic terminations in the Ti 2 CoAl/MgO(100) heterojunction were comprehensively investigated using first-principle calculations. In the equilibrium interface structures, the length of the alloy-Mg bond was found to be much longer than that of the alloy-O bond because of the forceful repulsion interactions between the Heusler interface atoms and Mg atoms. The competition among d-electronic hybridization, d-electronic localization, and the moving effect of the interface metal atoms played an important role in the interface atomic magnetic moment. Unexpected interface states appeared in the half-metallic gap for all terminations. The "ideal" half-metallicity observed in the bulk had been destroyed. In TiAl-Mg and AlAl-O terminations, the maximal spin polarization of about 65% could be reserved. The tunnel magnetoresistance (TMR) value was deduced to be lower than 150% in the Ti 2 CoAl/MgO(100) heterojunction at low temperature.

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Section: Introductionmentioning

confidence: 99%

“…In MTJ, the TMR value is the most important parameter, which can be defined by the Julliere formula with the spin polarizations of the ferromagnetic electrodes as follows [11]: TMR = 2P 1 P 2 /(1 − P 1 P 2 ), (1) where P 1 and P 2 denote the spin-polarized values of two ferromagnetic layers. The P value can be defined as follows:…”

Section: Introductionmentioning

confidence: 99%