The electronic and magnetic properties of the bulk, Sc2MnSi surfaces, and Sc2MnSi/CdTe (111) interface

Jolan, Mudhahir H.; Al-zyadi, Jabbar M. Khalaf

doi:10.1007/s00339-023-06730-x

Cited by 1 publication

(1 citation statement)

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“…The quaternary Heusler compound XX Y Z is a LiMgPdSb-type compound with space group F-43m, number 216. [21,22] According to Wang's report, [16] the transition metal atom X atom occupies position C, the transition metal X atom occupies position A, the lanthanide element atom Y occupies position B and the main group element Z occupies position D. This station has the lowest energy and the most stable structure. Figure 1(b) shows the density of states (DOS) diagram of a spin gapless semiconductors (SGS) with a zero band gap in the spin-up direction and a wider band gap in the spin-down direction.…”

Section: Introductionmentioning

confidence: 99%

Discovery of new potential magnetic semiconductors in quaternary Heusler compounds by addition of lanthanides

Guo 郭,

Feng 冯,

Tao 陶

et al. 2023

Chinese Phys. B

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Magnetic semiconductors have attracted a lot of attention by having both electronic charge and spin degrees of freedom. In this paper, we obtained twenty magnetic semiconductors such as FeVLaSb, FeVPrSb, FeCrTbSi, CoVDySi, and CoVHoSi by adding lanthanides to quaternary Heusler compounds based on the Slater-Pauling law and orbital hybridization theory. The relationship between the lattice constants and energy gaps of the magnetic semiconductors with lanthanide elements is investigated by in-depth analysis. These magnetic semiconductors of quaternary Heusler compounds promising candidates to find applications as spin filtering materials in spintronics devices.

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Section: Introductionmentioning

confidence: 99%