Expanded applications for high performance VOx microbolometer FPAs

Murphy, Daniel F.; Ray, Michael; Kennedy, Adam; Wyles, Jessica; Hewitt, C.; Wyles, Richard; Gordon, E.; Sessler, T.; Baur, Stefan T.; Lue, D. Van; Anderson, Shane; Chin, Richard; Gonzalez, H. Becerril; Père, Christian; Ton, Sam; Kostrzewa, Thomas

doi:10.1117/12.609462

Cited by 13 publications

(11 citation statements)

References 6 publications

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“…In its prevailing implementation, IR imaging in the atmospheric window 8 -14 m is based on large arrays of microbolometers ͑10 5 -10 6 pixels͒ placed in a focal plane of IR optics, and operating at room temperature ͓uncooled focal plane array ͑UFPA͒ technology͔. [1][2][3][4] Absorbed IR radiation changes the temperature of a microbolometer, which in turn changes its resistance, the latter being read out from each pixel, eventually being converted into a picture in the visible domain. Some of the relevant requirements are listed below:…”

Section: Introductionmentioning

confidence: 99%

Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

Gurvitch¹,

Luryi²,

Polyakov³

et al. 2009

Journal of Applied Physics

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In the resistive phase transition in VO 2 , temperature excursions taken from points on the major hysteresis loop produce minor loops. For sufficiently small excursions these minor loops degenerate into single-valued, nonhysteretic branches ͑NHBs͒ linear in log͑͒ versus T and having essentially the same or even higher temperature coefficient of resistance ͑TCR͒ as the semiconducting phase at room temperature. We explain this behavior based on the microscopic picture of percolating phases. Similar short NHBs are found in otherwise hysteretic optical reflectivity. We discuss the opportunities NHBs present for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 10 2-10 3 times smaller resistivity than in a pure semiconducting phase, thus providing a microbolometer operating without hysteresis, with low tunable resistivity, and high TCR. Unique features of the proposed method and projected figures of merit are discussed in the context of uncooled focal plane array IR visualization technology.

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Section: Introductionmentioning

confidence: 99%

Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

Gurvitch¹,

Luryi²,

Polyakov³

et al. 2009

Journal of Applied Physics

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“…In this letter, we demonstrate memristive behavior in a Vanadium Dioxide (VO 2 ) thin film. VO 2 has proven to be a versatile material, exhibiting many properties exploitable for devices [8][9][10] What makes VO 2 so useful and interesting is its insulator-to-metal (IMT) phase transition occurring near room temperature [11,12], and the ability to control this transition by applied current [13], electric field [14] and photoexcitation [15,16]. As VO 2 passes through the IMT, nanoscale metallic regions emerge from the insulating host, increasing in number and size to form a percolative transition [17].…”

mentioning

confidence: 99%

Phase-transition driven memristive system

Driscoll

Kim²,

Chae³

et al. 2009

Applied Physics Letters

341

236

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Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena

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“…The status of these developments has been documented by suppliers [18][19][20][21][22], and the objectives of the work by a recent Army perspective [23]. Generally, 25-ìm pixel microbolometers are now achieving sensitivities comparable to those common for 50-ìm pixel devices of a few years ago.…”

Section: Uncooled Detectorsmentioning

confidence: 99%

“…Generally, 25-ìm pixel microbolometers are now achieving sensitivities comparable to those common for 50-ìm pixel devices of a few years ago. Table 1 summarizes results from recent conference papers [18][19][20][21][22]24]. All of the devices listed in Table 1 are microbolometers based upon vanadium oxide (VO x ) thermistors with the exception of Mitsubishi which uses a series of p-n silicon junctions made with silicon-on-insulator (SOI) technology.…”

Section: Uncooled Detectorsmentioning

confidence: 99%

Third-generation sensors for night vision

Norton¹

2006

Opto-Electronics Review

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Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdle two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480×640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

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Expanded applications for high performance VOx microbolometer FPAs

Cited by 13 publications

References 6 publications

Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging

Phase-transition driven memristive system

Third-generation sensors for night vision

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