Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes

ElAfandy, Rami T.; Majid, Mohammed Abdul; Ng, Tien Khee; Zhao, Lan; Cha, Dongkyu; Ooi, Boon S.

doi:10.1002/adfm.201303001

Cited by 38 publications

(27 citation statements)

References 36 publications

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“…This is a common task for electronics industry dealing with transistors [1], electronic or magnetic memories [2,3], light-emitting, photovoltaic or multiferroic devices [4][5][6]. A key role for development and production of such devices is the nanoscale characterization of the local magnetic fields in the materials [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Multiscale differential phase contrast analysis with a unitary detector

2016

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Chuvilin, Multiscale differential phase contrast analysis with a unitary detector, Ultramicroscopy, http://dx.doi.org/10. 1016/j.ultramic.2015.12.008 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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Section: Introductionmentioning

confidence: 99%

Multiscale differential phase contrast analysis with a unitary detector

2016

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“…Dislocation-free GaN membrane has been exfoliated with limited lateral dimension. [ 5 ] There have also been efforts and demonstrations in separating µm-thick GaN device structures from substrates using laser liftoff, [ 6 ] chemical liftoff, [ 7 ] electrochemical liftoff, [ 8,9 ] and mechanical liftoff on suitable buffer layers. [ 10,11 ] These works open the way for vertical device confi guration but fall short in the pursuit of ultrathin (<500 nm), mechanically fl exural membranes.…”

Section: Introductionmentioning

confidence: 99%

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Xiong

Park

Song

et al. 2014

Adv Funct Materials

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We report in this work the fabrication of single crystal GaN nanomembranes, with a thickness as low as 50 nm. Large area (≥5 mm × 5 mm) GaN membranes are produced by electrochemical etching (ECE) with a special high-conductivity sacrifi cial underlayer. Large-area, crackfree transfer of GaN NMs have been performed onto metal, glass, and polymer target substrates. The transport properties of freestanding GaN nanomembranes are analyzed using UV-assisted Hall measurements. The interaction of the carriers with the surface electronic states are investigated by the intensity dependence of the photoconductor gain, and by the temperature-dependent measurements of photocurrent decay. The transport property of GaN NM, down to a thickness of 90 nm, remains very comparable to that from much thicker GaN structures. Enhancement-mode fi eld effect transistors (FETs) have been fabricated and demonstrated on a SiO 2 / Si(001) wafer, suggesting that GaN nanomembranes can be a new candidate for fl exible electronics requiring high power and high-frequency. Results and Discussion Nanomembrane FabricationThe principle of using an ECE process to selectively remove underlying GaN sacrifi cial layers has been described before. [ 12,13 ] Multi-layered GaN structures having nanomembrane layers (50 to 500 nm thick) on top of heavily-doped ( n ≈ 1 × 10 19 cm −3 ) GaN sacrifi cial layers were grown by metal-organic chemical vapor deposition (MOCVD) process on sapphire. To obtain large-area NM within a reasonable time, a periodic array of via holes were created such that the undercut etching can proceeds uniformly around these openings. The via-holes are squares with a dimension of 10 µm and a diagonal periodicity of 25, 50, and 100 µm. These holes were created by Cl-based inductively coupled plasma (ICP) etching to expose the sacrifi cial layer. The photoresist (Shipley S1827) used during the Cl-ICP etching was retained to protect the front surface of the membrane during ECE. The nanomembrane layers became detached from the substrate once the undercut regions around each opening coalesce with the adjacent ones. GaN NMs were cleaned by rinsing sequentially in DI water, acetone and isopropyl-alcohol (IPA). After cleaning, they were transferred on to other substrates Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor Kanglin Xiong , Sung Hyun Park , Jie Song , Ge Yuan , Danti Chen , Benjamin Leung , and Jung Han * Large-area, free-standing and single-crystalline GaN nanomembranes are prepared by electrochemical etching from epitaxial layers. As-prepared nanomembranes are highly resistive but can become electronically active upon optical excitation, with an excellent electron mobility. The interaction of excited carriers with surface states is investigated by intensity-dependent photoconductivity gain and temperature-dependent photocurrent decay. Normally off enhancement-type GaN nanomembrane MOS transistors are demonstrated, suggesting that GaN could be used in fl exible electronics for high power and hig...

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“…A new cost-effective and energy efficient technique for exfoliation of threading dislocation-free, singlecrystalline, ultrathin (25 nm) GaN nanomembranes has been recently proposed on the basis UV-assisted electroless chemical etching of n-GaN in HF-based electrolyte (CH 3 OH:H 2 O 2 :HF) without any annealing procedures [78].…”

Section: Other Technological Methodsmentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes

Cited by 38 publications

References 36 publications

Multiscale differential phase contrast analysis with a unitary detector

Multiscale differential phase contrast analysis with a unitary detector

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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