Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes

Abstract

Crack-free crystalline AlN film was synthesized on two-dimensional multilayer hexagonal BN (h-BN) by metal organic vapor phase epitaxy (MOVPE). The multilayer h-BN was directly grown on sapphire substrates in wafer scale by MOVPE, with a thickness of 2.9 nm. The AlN film grown on the h-BN/sapphire presented a smooth surface. We further realized the exfoliation of AlN film utilizing the weak bonds within h-BN layers. Moreover, the AlGaN-based deep-ultraviolet light-emitting diodes grown on the AlN/h-BN/sapphire template exhibited obvious emissions at 281 nm. It is promising that the multilayer h-BN will pave the way to obtain transferable high-efficiency devices with wafer scale.

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

“…[1] Besides, Wu et al reported the growth of AlGaN-based deep-ultraviolet LED structure on oxygen-plasma-treated h-BN/Al 2 O 3 . [30] Although several groups have reported the epitaxy of III-nitrides on h-BN, graphene, and so on, the interface bonding behaviors and/or the nucleation phenomena of III-nitrides are seldom reported and are not well studied to the best of our knowledge. [31][32][33] In this work, we study the epitaxy of GaN on 2-in.…”

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3

“…They observed blue electroluminescence from those LEDs on a transferred metal foil. Wu et al grew crack‐free AlN layers on h ‐BN/Al 2 O 3 substrates with O 2 plasma treatment and confirmed a DUV emission from AlGaN LEDs …”

“…In this respect, wafer‐scale thin‐film growth methods, such as CVD or molecular beam epitaxy (MBE), are preferable to realize device applications. Many research groups have reported thermal CVD of BN thin films with a wide variety of boron precursors, such as borazine (B 3 N 3 H 6 ), boron‐halides (BF 3 , BCl 3 , and BBr 3 ), and triethyl boron ((C 2 H 5 ) 3 B, TEB), on sapphire, SiC, Ni, and Cu substrates. For borazine, it is difficult to control the N/B ratio, which leads to turbostratic boron nitride ( t ‐BN), a disordered phase of h ‐BN.…”

“…Other research groups have reported the growth of mixed‐phase BN, including amorphous BN ( a ‐BN), t ‐BN, cubic BN ( c ‐BN), wurtzite BN ( w ‐BN), and rhombohedral BN ( r ‐BN), by plasma‐assisted CVD . Overall, a high T g seems to be required for growth on Al 2 O 3 substrates . However, in conventional commercial CVD equipment used for GaN and AlGaN systems, T g is typically restricted to be <1100 °C due to heating capacity limitations.…”

Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3

“…Many research groups have reported BN growth by thermal chemical vapor deposition (CVD), plasma‐assisted CVD, and molecular beam epitaxy (MBE) . The growth conditions include a wide varieties of boron precursors of borazine (B 3 N 3 H 6 ), boron halides (BF 3 , BCl 3 , BBr 3 ), triethylboron ((C 2 H 5 ) 3 B, TEB), trimethylboron ((CH 3 ) 3 B, TMB), and diborane (B 2 H 6 ) . Also, various substrates for BN growth were investigated, such as sapphire, SiC, Ni, and Cu …”