Exclusion in the semiconductor p⁺-p-p⁺structure under conditions of a temperature gradient

Abstract

The paper presents theoretical and experimental investigations of the exclusion and accumulation effects in rectangular p + -p-p + structures with a homogeneously doped p-region under conditions of a temperature gradient along its base. It is shown that the temperature gradient causes a strong asymmetry of properties, such as current-voltage characteristics, distributions of non-equilibrium carriers and electric field, with regard to polarity of the voltage drop across the base. The results obtained can be useful for the technology of infrared devices working at room temperature as well as for sensors sensitive to the polarity of an electric field.