Excitons of the structure in wurtzite InxGa1−xN and their properties

Alexandrov, Dimiter

doi:10.1016/s0022-0248(02)01758-x

Cited by 16 publications

(9 citation statements)

References 31 publications

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“…the formula derived in [10] is valid. E(r) = ∑ q δ (r -R q ) E(q) (13) where E(q) is electron energy in quasi-elementary cell having radius-vector R q , and r is radius-vector.…”

Section: )mentioning

confidence: 82%

“…point Γ of the electron band structure) will be presented for In x Al 1-x N. (Details of these calculations are given in [5,10].) Each type of quasi-elementary cell forms sector υ of the corresponding electron band structure (υ = 1, 2, 3, 4, 5).…”

Section: )mentioning

confidence: 99%

“…In terms of both the optical absorption and the photoluminescence the energy band gap of In x Al 1-x N has to be determined as energy differences between Γ Fig.2, and the corresponding energy intervals are due to defects in the crystal lattices of In x Al 1-x N. The nature of these shifts is different from the nature of the shifts of the boundaries of the energy band gap described in [11,12]. The same approach is used for determination of the energy states in In x Ga 1-x N [10], in InO y N 1-y [5] and in non-stoichiometric InN [13]. (Fig.2).…”

Section: )mentioning

confidence: 99%

See 2 more Smart Citations

Electron band structure and properties of disordered semiconductor compound alloys

Alexandrov¹,

Butcher²,

Tansley³

2007

WIT Transactions on Modelling and Simulation, Vol 46

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A new metric system called the electron metric system, having a basic metric constant, is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of a diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. Correlation is shown between the electron energy and the electron wave vector in the multinary crystal. The LCAO electron band structures of In x Al 1-x N are presented. The phenomenon tunnel optical absorption is investigated in In x Al 1-x N, in In x Ga 1-x N, in InN containing oxygen and in non-stoichiometric InN. It is found the optical absorption edges begin in energies much lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons.

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“…the formula derived in [10] is valid. E(r) = ∑ q δ (r -R q ) E(q) (13) where E(q) is electron energy in quasi-elementary cell having radius-vector R q , and r is radius-vector.…”

Section: )mentioning

confidence: 82%

Section: )mentioning

confidence: 99%

Section: )mentioning

confidence: 99%

See 1 more Smart Citation

Electron band structure and properties of disordered semiconductor compound alloys

Alexandrov¹,

Butcher²,

Tansley³

2007

WIT Transactions on Modelling and Simulation, Vol 46

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“…LCAO electron band structure of wurtzite Mn x Ga 1-x N for temperature 300K for points Γ are calculated by the previously developed method [7]. For the sake of simplicity the wurtzite Mn x Ga 1-x N is called multinary crystal.…”

Section: Resultsmentioning

confidence: 99%

“…A multinary crystal is considered to be a periodical crystal having a large primitive super-cell, containing a finite number of quasi-elementary cells. It is found [7] that the electron energy in a primitive super-cell of the multinary crystal can be presented in the following way.…”

Section: Resultsmentioning

confidence: 99%

Electron Band Structure of MnGaN

et al. 2007

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Electron band structure and optical properties of InN and related alloys

Alexandrov

Butcher

Tansley

2006

Physica Status Solidi (a)

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New metric system called electron metric system having basic metric constant is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. It is shown correlation between them in the multinary crystal. LCAO electron band structures of Inx Al1–x N and of Inx Ga1–x N are presented. The phenomenon tunnel optical absorption is investigated in Inx Al1–x N, in Inx Ga1–x N, in InN containing oxygen and in non‐stoichiometric InN. It is found the optical absorption edges begin in energies 0.2–1.62 eV that are lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons that change in interval 0.5–1.01 eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Excitons of the structure in wurtzite InxGa1−xN and their properties

Cited by 16 publications

References 31 publications

Electron band structure and properties of disordered semiconductor compound alloys

Electron band structure and properties of disordered semiconductor compound alloys

Electron Band Structure of MnGaN

Electron band structure and optical properties of InN and related alloys

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