Electron band structure and optical properties of InN and related alloys

Alexandrov, Dimiter; Butcher, Scott; Tansley, T.L.

doi:10.1002/pssa.200563501

Cited by 8 publications

(5 citation statements)

References 10 publications

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“…The tunnel optical absorption is investigated in details in [8,9]. The basis of this phenomenon is the overlapping between the electron wave function | i > of the initial electron state and the electron wave function | f > of the final electron state in term of optical transition.…”

Section: Discussionmentioning

confidence: 99%

Electron Band Structure of MnGaN

et al. 2007

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Section: Discussionmentioning

confidence: 99%

Electron Band Structure of MnGaN

et al. 2007

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“…2) of wurtzite Mn x Ga 1-x N for points Γ is calculated by previously developed method [9,10] and in consideration of the following conditions: a) Mn atom substitutes for a Ga atom saving the tetrahedral symmetry of the crystal cell; b) two of the valence electrons of isolated Mn atom occupy 4s orbital and other 5 valence electrons occupy 6 S level of the 3d orbital (according to Hund's rule the electron spin of the ground state 6 S is 5/2); c) the Mn-N bond is ion-covalent and it has tetrahedral symmetry. Detail description of the calculation of the LCAO electron band structure is given in [1].…”

Section: Methodsmentioning

confidence: 99%

Dependence of the magnetic properties of MnGaN epitaxial layers on external electrical field

Alexandrov

2009

Open Chemistry

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Investigation of the magnetic properties of MnGaN epitaxial layers as a function of external electrical field was performed on the basis of field effect structure. The structure included substrate of n-type GaN, epitaxial layer of n-type MnxGa1-xN, dielectric layer and metal layer acting as field effect device gate. Each Mn atom in MnxGa1-xN contributes 4 net spins due to the electrons occupying energy levels 4F, 4D, 4P and 4G belonging to 3d orbital, and these levels are in the energy band gap and in the top of the valence band of MnxGa1-xN. The position of the Fermi level is determined to be in the energy band gap of the layer of GaN and to be above the level 4F in the layer of MnxGa1-xN. In this way application of external negative voltage on the gate causes change in the number of electrons contributing net spins and the saturation magnetization Msat of MnxGa1-xN changes as well. It was found that Msat changes in the range 1.15 × 10−3–0.7 × 10−3 A μm−1 if the external voltage changes in the interval 0–−5V. The application of this structure for the design of spintronic devices is discussed in this paper.

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“…Tunnel optical radiation is an opposite phenomenon to the tunnel optical absorption [1,2] and it can be described as it follows: normally disordered semiconductors have electron energy pockets in both the conduction band and the valence band [1,2] (Fig.1). By definition, an energy pocket is local minimum in the conduction band or local maximum in the valence band that can accommodate a few electrons only (it is not a quantum well).…”

Section: Tunnel Optical Radiationmentioning

confidence: 99%

“…Theoretical and experimental results about electro-luminescence observed in n-In x Ga 1-x N/P-GaN hetero-junctions are reported in this paper. The theoretical conclusions are made on the basis of previous author's contributions [1,2]. The hetero-junctions are designed and technologically produced in the Semiconductor Research Laboratory at Lakehead University by new technology that is developed in this lab [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Tunnel optical radiation in InxGa1−xN

Alexandrov¹,

Skerget²

2014

AIP Conference Proceedings

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An investigation of tunnel optical radiation in epitaxial layers of n-type In x Ga 1-x N grown on p-type GaN by novel plasma based migration enhanced epitaxy is presented. Experimental results of electro-luminescence spectra for n-In x Ga 1-x N/p-GaN hetero-junctions were obtained and they show two well expressed optical bandsone in range 500-540 nm and other in range 550-610 nm. An interesting detail is that each band begins and ends by sharp drops of the radiation, which nearly approach zero. A theoretical investigation of the unusual behavior of these spectra was done using LCAO electron band structure calculations. The optical ranges of these bands show that the radiation occurs in the In x Ga 1-x N region. In fact, substitutions of In atoms in Ga sites creates defects in the structure of In x Ga 1-x N and the corresponding LCAO matrix elements are found on this basis. The LCAO electron band structures are calculated considering the interactions between nearest-neighbor orbitals. Electron energy pockets are found in both the conduction and the valence bands at the Γ point of the electron band structures. Also it is found that these pockets are separated by distances, for which there is overlapping between the electron wave functions describing localized states belonging to the pockets, and as a result tunnel optical radiation can take place. This type of electron transitionbetween such a pocket in the conduction band and a pocket in the valence bandoccurs in In x Ga 1-x N, causing the above described optical bands. This conclusion concurs with the fact that the shapes of these bands change with change of the applied voltage.

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Electron band structure and optical properties of InN and related alloys

Cited by 8 publications

References 10 publications

Electron Band Structure of MnGaN

Electron Band Structure of MnGaN

Dependence of the magnetic properties of MnGaN epitaxial layers on external electrical field

Tunnel optical radiation in InxGa1−xN

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