Abstract:Investigation of the magnetic properties of MnGaN epitaxial layers as a function of external electrical field was performed on the basis of field effect structure. The structure included substrate of n-type GaN, epitaxial layer of n-type MnxGa1-xN, dielectric layer and metal layer acting as field effect device gate. Each Mn atom in MnxGa1-xN contributes 4 net spins due to the electrons occupying energy levels 4F, 4D, 4P and 4G belonging to 3d orbital, and these levels are in the energy band gap and in the top … Show more
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