Excitonic ultraviolet lasing in ZnO-based light emitting devices

Ryu, Yungryel; Lubguban, Jorge; Lee, T. S.; White, H. W.; Jeong, T. S.; Youn, C. J.; Kim, B. J.

doi:10.1063/1.2718516

Cited by 194 publications

(94 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZnO-based semiconductors are recognized as very promising photonic materials in the ultraviolet and visible regions [1][2][3][4]. Doped ZnO has become a new trend in research and in technological applications, as its electronic and optical properties can be greatly improved.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of optical properties in Ca-doped ZnO alloys

Bai¹,

Lian

Zheng

et al. 2012

Open Physics

View full text Add to dashboard Cite

Abstract:Various electronic and optical properties of Zn 1− Ca O ternary alloys of wurtzite structure are calculated using a first-principles approach based on the framework of the generalized gradient approximation to density-functional theory. In particular, on-site Coulomb interactions are introduced, which can reasonably well predict the electronic properties and band gaps of the Zn 1− Ca O (0≤x≤0.25) system. The imaginary part of the calculated dielectric function indicates that the optical transition between O 2p states in the valence band and Zn 4s states in the conduction band shifts to the high-energy range as the Ca concentration increases. The calculated band gap shows a significant increase with increasing Ca concentration. Therefore, Zn 1− Ca O ternary alloys may be a potential candidate alloy for optoelectronic materials, and especially for light-emitters and detectors.

show abstract

Section: Introductionmentioning

confidence: 99%

First-principles study of optical properties in Ca-doped ZnO alloys

Bai¹,

Lian

Zheng

et al. 2012

Open Physics

View full text Add to dashboard Cite

show abstract

“…In the reverse p-ZnO/n-GaN structures [4], the 409 nm EL was observed from the p-ZnO region. In the n-ZnO/p-Si [5] and n-ZnO/p-BeZnO [6] structures fabricated by the rf-magnetron sputtering and the plasma immersion ion implantation techniques, the 580 nm and 360-390 nm EL were observed from n-ZnO regions, respectively. In the n-ZnO/p-SiC structures fabricated by the filtered arc vacuum technique [7], the 385 nm EL was observed from the ZnO region.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence from ZnMgO/ZnO Heterojunctions

Yamada

Mimura

Komiyama

et al. 2009

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

The p-type Zn0.8Mg0.2O/n-type ZnO heterojunctions have been fabricated by a pulsed laser deposition (PLD) technique and the relations between the I-V and the electroluminescence (EL) characteristics were investigated. The ZnMgO film shows the best p-type characteristic for the 10% Sb concentration. The different Ga concentrations in n-type ZnO layers show different I-V and EL characteristics for the ZnMgO/ZnO heterojunctions. The 0.1% of Ga in the ZnO film shows the lowest resistivity (0.048 ohm·cm) and the highest electron mobility (59 cm 2 /Vs), however, the ZnMgO/ZnO junction shows only an Ohmic contact and no EL is observed. The heterostructure using the ZnO layer with 5.0% Ga shows the best rectifying behavior, however, no EL is observed. The 1.0% of Ga in the ZnO film shows the middle resistivity (0.51 ohm·cm) and the middle electron mobility (27 cm 2 /Vs) and the ZnMgO/ZnO heterojunction shows only a weak rectifying behavior but clear EL is observed. The threshold voltage of the EL is about 10V and the EL intensity is increased with the forward biases up to 20 V. These results indicate that the EL from ZnMgO/ZnO junctions does not necessarily require good ideality factors of the diodes.

show abstract

“…1, 12, 17 Therefore, BeO (E g =10.60 eV) that also crystallizes in the W structure has been considered as an alloying system for ZnO for UV optoelectronic devices and sensors, despite the high degree of toxicity of elemental Be. 12,17,18 It was shown that Zn 1-x Be x O thin films can be deposited using hybrid beam deposition 19 with no phase separation over the entire composition range. 16 Furthermore, since in Zn 1-x Be x O the band gap can theoretically be tuned from 3.37 to 10.60 eV, this materials system may replace Zn 1-x Mg x O solid solutions that are being considered in applications such as field effect transistors, polymer-oxide hybrid solar cells, quantum Hall effect devices, high-k films on Si, and acoustic resonators.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric properties of ZnO-BeO solid solutions

Alpay

2011

Phys. Rev. B

View full text Add to dashboard Cite

The electrical properties, the spontaneous polarization, and the piezoelectric response of ZnO can be tailored by alloying ZnO with BeO for applications such as electrodes in flat panel displays and solar cells, blue and ultra-violet (UV) light emitting devices, and highly sensitive UV detectors. We present here the results of a study that employs density functional theory to analyze the crystal structure, the band structure, spontaneous polarization, and piezoelectric properties of

show abstract

Excitonic ultraviolet lasing in ZnO-based light emitting devices

Cited by 194 publications

References 15 publications

First-principles study of optical properties in Ca-doped ZnO alloys

First-principles study of optical properties in Ca-doped ZnO alloys

Electroluminescence from ZnMgO/ZnO Heterojunctions

Theoretical analysis of the crystal structure, band-gap energy, polarization, and piezoelectric properties of ZnO-BeO solid solutions

Contact Info

Product

Resources

About