Exciton-related electroluminescence from ZnO nanowire light-emitting diodes

Zimmler, Mariano A.; Voss, T.; Ronning, Carsten; Capasso, Federico

doi:10.1063/1.3157274

Cited by 95 publications

(63 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These contact metals resulted in ohmic behavior at the biases measured and are commonly used in the literature. 28,29 An In back contact was cold-pressed to the Si substrate to control carrier concentration through gating. The devices were then placed in a variable temperature cryostat capable of applying a magnetic field perpendicular to the surface of the device, which was identified as the [112] direction by transmission electron microscopy (TEM) diffraction patterns.…”

Section: Fabrication and Experimental Setupmentioning

confidence: 99%

Weak localization and mobility in ZnO nanostructures

et al. 2009

View full text Add to dashboard Cite

We conduct a comprehensive investigation into the electronic and magneto-transport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid (VLS) method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50-100 nm at 1.9 K, and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using 4-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of ∼100 cm 2 V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires, and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively-charged Zn interstitial impurities.

show abstract

Section: Fabrication and Experimental Setupmentioning

confidence: 99%

Weak localization and mobility in ZnO nanostructures

et al. 2009

View full text Add to dashboard Cite

show abstract

“…Recent progress in nanophotonics [4] and plasmonic circuitry [5] emphasizes the need for nanoscale light sources [6]. Besides application of semiconductor nanowires as optoelectronic devices [7,8,9], the remarkable optical properties of single nanowires like strong localization of light [10] and efficient waveguiding [11,12] as well as laser oscillations under pulsed optical pumping were already demonstrated for a wide range of semiconductor materials with emission from the UV to the NIR [13,14,15]. Optical pumping of the semiconductor nanowire material enables inversion and high optical gain suitable even for continuous wave lasing [16].…”

Section: Introductionmentioning

confidence: 99%

Polarization features of optically pumped CdS nanowire lasers

Röder¹,

Ploss²,

Kriesch³

et al. 2014

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Abstract. High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while the nanowire emission was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence was observed both above the lasing threshold and in the regime of amplified spontaneous emission. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85 %. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization.

show abstract

“…ZnO nanowires grown on Si substrates are well suited for the development of such optoelectronic devices. Specific applications include the use of n-ZnO/p-Si heterostructure photodiodes for UV and visible light detection [23][24][25]. Metal-catalyst-assisted thermal chemical vapor transport via the vapor-liquid-solid (VLS) mechanism is a popular technique for fabricating ZnO nanowires on Si substrates.…”

Section: Intoroductionmentioning

confidence: 99%