Exciton recombination energy in spherical quantum dots on Ga1−xInxAsySb1−y/GaSb grown by liquid-phase epitaxy

Abstract

Photoreflectance and photoluminescence study of Ga 0.76 In 0.24 Sb / GaSb single quantum wells: Band structure and thermal quenching of photoluminescence Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of less than 0.012 J. Appl. Phys. 98, 093714 (2005); 10.1063/1.2127126Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures