Photoluminescence study of porous p-type silicon: Identification of radiative transitions

Ramirez-Gutierrez, C.F.; Medina-Herrera, Andrés; Tirado-Mejı́a, L.; Zubieta‐Otero, Luis F.; Auciello, Orlando; Rodríguez‐García, Mario E.

doi:10.1016/j.jlumin.2018.04.036

Cited by 11 publications

(7 citation statements)

References 25 publications

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“…Pore diameter, as well as the porosity, increases as current density increases. Meanwhile, the pore distribution regularity decreases [ 37 , 38 ].…”

Section: Resultsmentioning

confidence: 99%

In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

et al. 2021

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Porous silicon (PSi) on p++-type (111) silicon substrate has been fabricated by electronically etching method in hydrofluoric acid (HF) media from 5 to 110 mA/cm2 of anodizing current density. The problem of determining the optical properties of (111) PSi is board through implementing a photoacoustic (PA) technique coupled to an electrochemical cell for real-time monitoring of the formation of porous silicon thin films. PA amplitude allows the calculation of the real part of the films refractive index and porosity using the reflectance self-modulation due to the interference effect between the PSi film and the substrate that produces a periodic PA amplitude. The optical properties are studied from specular reflectance measurements fitted through genetic algorithms, transfer matrix method (TMM), and the effective medium theory, where the Maxwell Garnett (MG), Bruggeman (BR), and Looyenga (LLL) models were tested to determine the most suitable for pore geometry and compared with the in situ PA method. It was found that (111) PSi exhibit a branched pore geometry producing optical anisotropy and high scattering films.

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“…Pore diameter, as well as the porosity, increases as current density increases. Meanwhile, the pore distribution regularity decreases [ 37 , 38 ].…”

Section: Resultsmentioning

confidence: 99%

In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

et al. 2021

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“…Silicon-based materials are "sine qua non" in micro/nano/opto-electronics [1][2][3][4][5] . The continuous size reduction of such devices and the growing aspect of their efficient integration naturally lead to improve thermal management.…”

Section: Introductionmentioning

confidence: 99%

Thermal properties study of silicon nanostructures by photoacoustic techniques

Dubyk

Nychyporuk

Lysenko

et al. 2020

Journal of Applied Physics

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The photoacoustic method with piezoelectric detection for the simultaneous evaluation of the thermophysical properties is proposed. The approach is based on the settling of an additional heat sink for redistribution of heat fluxes deposited on the sample surface. Firstly, the approach was tested on the porous silicon with welldefined morphology and well-studied properties. Then, heat capacity and thermal conductivity of silicon nanowires arrays have been investigated by recovering the experimental data through numerical simulations. The decrease of heat capacity and effective thermal conductivity of the samples upon increasing thickness and porosity of the sample is observed. Such behavior could be caused by the increase of the structure heterogeneity. In particular, this can be related to larger disorder (increased density of broken nanowires and larger porosity) that appears during the etching process of the thick layers.

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“…Extrinsic parameters are closely related to the fabrication methods of PSi films to obtain a tunable thicknesses, reflective index (porosity), and smooth interfaces. On the other hand, intrinsic parameters are associated with the substrate quality which is directly related to the carrier distribution, the crystalline quality, and the optothermal surface stability 36–38 .…”

Section: Introductionmentioning

confidence: 99%

Design, fabrication, and optical characterization of one-dimensional photonic crystals based on porous silicon assisted by in-situ photoacoustics

Ramirez-Gutierrez

Martinez‐Hernandez

Lujan-Cabrera

et al. 2019

Sci Rep

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We present a methodology to fabricate one-dimensional porous silicon (PSi) photonic crystals in the visible range by controlled etching and monitored by photoacoustics. Photoacoustic can record in-situ information about changes in the optical path and chemical reaction as well as in temperature, refractive index, and roughness during porous layers formation. Radiometry imaging can determine the carrier distribution of c-Si substrate that is a fundamental parameter to obtain high-quality PSi films. An electrochemical cell was calibrated through a series of single PSi layers that allows knowing the PA amplitude period, porosity, and roughness as a function of the current density. Optical properties of single layers were determined using the reflectance response in the UV-Vis range to solve the inverse problem through genetic algorithms. PhC structures were designed using the transfer matrix method and effective media approximation.Based on the growth kinetics of PSi single layers, those structures were fabricated by electrochemical etching monitored and controlled by in-situ photoacoustics.

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Photoluminescence study of porous p-type silicon: Identification of radiative transitions

Cited by 11 publications

References 25 publications

In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

Thermal properties study of silicon nanostructures by photoacoustic techniques

Design, fabrication, and optical characterization of one-dimensional photonic crystals based on porous silicon assisted by in-situ photoacoustics

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