2008
DOI: 10.1007/s00340-008-3160-x
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Exciton–polariton formation at room temperature in a planar ZnO resonator structure

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Cited by 40 publications
(43 citation statements)
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“…We attribute this finding on the one hand to the incipient overlap of the LPB with the Bragg band edge (BBE) mode at large angles and on the other hand to the energy splitting between the TE and TM polarizations, which increases with increasing angle. A strong coupling between the LPB and the BBE as reported in [14] is not observable.…”
Section: Resultsmentioning
confidence: 77%
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“…We attribute this finding on the one hand to the incipient overlap of the LPB with the Bragg band edge (BBE) mode at large angles and on the other hand to the energy splitting between the TE and TM polarizations, which increases with increasing angle. A strong coupling between the LPB and the BBE as reported in [14] is not observable.…”
Section: Resultsmentioning
confidence: 77%
“…In these materials, the exciton binding energy is smaller than the thermal energy at RT and excitons are not stable at RT. Therefore, many efforts have been made to obtain microresonators with gain media that reveal an exciton binding energy larger than the thermal energy at RT, such as organic semiconductors [10,11], or GaN [7,12,13] and ZnO [14]- [16]. The advantage of organic semiconductors is their huge exciton oscillator strength resulting in a large coupling strength between the excitons and the cavity photons.…”
Section: Introductionmentioning
confidence: 99%
“…On the contrary, the robustness of excitons in GaN and ZnO at RT has led to an increasing interest for these materials, especially after the first observation at RT of the strong coupling regime (SCR) 23 , and of polariton lasing in bulk- 24 and quantum well-based 25 GaN MCs elaborated on sapphire substrates. Concerning ZnO MCs, the SCR at RT has been reported more recently [26][27][28][29] , followed by polariton lasing at 120K 30 , then up to 250 K 31 , and finally at RT 32,33 . The difficulty to increase the number of pairs of the distributed Bragg reflectors (DBRs) due to the lattice and thermal expansion coefficient mismatch between silicon and nitrides prevented the achievement of polariton lasing in such samples 34,35 .…”
Section: Introductionmentioning
confidence: 99%
“…Recent works on ZnO microcavities have reported the SCR observation up to 410K [6][7][8][9]. The next step is now to obtain a polariton laser at RT but three main enhancements are currently needed:…”
Section: Introductionmentioning
confidence: 99%