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Prineas, J. P.; Ell, C.; Lee, E. S.; Khitrova, G.; Gibbs, H. M.; Koch, S. W.

doi:10.1103/physrevb.61.13863

Cited by 104 publications

(45 citation statements)

References 26 publications

(23 reference statements)

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“…Due to the increased absorption near excitonic transition, the transmission intensity decreases as the cavity modes approach to the exciton. And we also notice that the linewidth of transmission peaks gets broader as the cavity mode goes further away from excitonic resonance because of the increased absorption in shorter wavelength side of exciton [10]. Fig.…”

Section: Cavity Modes Coupled To Exciton In Qwmentioning

confidence: 80%

Optical properties of a laterally confined semiconductor microcavity containing a single quantum well

Lee

Gibbs

Khitrova

2003

Science and Technology of Advanced Materials

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The semiconductor microcavity with a thin oxide-aperture layer is fabricated, and linear optical transmission spectrum measured for various aperture diameters. First, the observation of bare cavity modes is demonstrated in this microstructure which is capable of confining light field three-dimensionally. Several transverse modes are observed as transmission peaks, which manifests the lateral field confinement achieved well down to 2 mm aperture diameter. And the transmission spectrum of cavity modes coupled to the excitonic resonance is measured for the same microcavity system containing a single quantum well. The result shows that each transverse mode couples to an exciton independently as it approaches the excitonic resonance frequency, giving rise to an anti-crossing behavior between coupled modes. q

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Section: Cavity Modes Coupled To Exciton In Qwmentioning

confidence: 80%

Optical properties of a laterally confined semiconductor microcavity containing a single quantum well

Lee

Gibbs

Khitrova

2003

Science and Technology of Advanced Materials

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“…Excitons in (In,Ga)As/GaAs SQW reveal tendency to a reduction of oscillator strength with decreasing well thickness [6,7], because the exciton wavefunction easily penetrates the barriers and confinementenhanced Coulomb interaction between electron and hole reduces. For both systems, the reported linewidths of heavy-hole exciton resonance are always a few times broader as compared to the radiative linewidth [7,8], which is of the order of 60 µeV [9].…”

Section: Introductionmentioning

confidence: 90%

“…We can compare our results with the data obtained by Prineas et. al. [9,19] on a set of 8.5 nm In 0.04 Ga 0.96 As/GaAs MQW Bragg structures having anti-reflection coating and studied in the normal incident geometry. The authors have demonstrated linear growth of total linewidth for increasing QW number N .…”

Section: B Reflection From Mqw Bragg Structurementioning

confidence: 99%

Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells

Poltavtsev

Efimov

Dolgikh

et al. 2014

Solid State Communications

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We study radiative linewidth of exciton resonance in shallow InxGa1−xAs/GaAs single quantum wells as a function of indium concentration in the range x = 0.02...0.10 and well thickness in the range LZ = 1...30 nm using the method of Brewster reflection spectroscopy. Record linewidths of heavyhole exciton resonance of about 130...180 µeV are measured in reflection spectra for single quantum wells with LZ = 2 nm and x = 0.02 at temperature 9 K. In these spectra, the non-radiative linewidth including inhomogeneous broadening can be comparable or even less than radiative linewidth. It is shown that radiative linewidth weakly depends on x and LZ in these ranges. In multiple-quantumwell Bragg structure with ten periods radiative linewidth exceeds inhomogeneous broadening by 4 times.

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“…(36), (37) and (39) to derive (a, f )-representation for T . The dispersion equation following from this representation has a relatively simple form:…”

Section: Off-bragg Structuresmentioning

confidence: 99%

Spectral properties of exciton polaritons in one-dimensional resonant photonic crystals

Erementchouk

Lisyansky

2006

Phys. Rev. B

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The dispersion properties of exciton polaritons in multiple-quantum-well based resonant photonic crystals are studied. In the case of structures with an elementary cell possessing a mirror symmetry with respect to its center, a powerful analytical method for deriving and analyzing dispersion laws of the respective normal modes is developed. The method is used to analyze band structure and dispersion properties of several types of resonant photonic crystals, which would not submit to analytical treatment by other approaches. These systems include multiple quantum well structures with an arbitrary periodic modulation of the dielectric function and structures with a complex elementary cell. Special attention was paid to determining conditions for superradiance (Bragg resonance) in these structures, and to the properties of the polariton stop band in the case when this condition is fulfilled (Bragg structures). The dependence of the band structure on the angle of propagation, the polarization of the wave, and the effects due to exciton homogeneous and inhomogeneous broadenings are considered, as well as dispersion properties of excitations in nearBragg structures.

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Exciton-polariton eigenmodes in light-coupledIn0.04Ga0.96As/

Cited by 104 publications

References 26 publications

Optical properties of a laterally confined semiconductor microcavity containing a single quantum well

Optical properties of a laterally confined semiconductor microcavity containing a single quantum well

Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells

Spectral properties of exciton polaritons in one-dimensional resonant photonic crystals

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