Exciton luminescence spectra of CuCl films and their change by photo-irradiation

Hasuo, Masahiro; Shimamoto, Atsuyoshi; Fujimoto, Takashi

doi:10.1016/j.jlumin.2004.09.022

Cited by 12 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It also exhibits a large bi-exciton binding energy of 34 meV [13,14] and biexciton lasing action from CuCl quantum dots embedded in NaCl matrix [10,15,16] has also been reported. CuCl thin films deposited on various substrates such as Al 2 O 3 , CaF 2 , quartz, TiO 2 and GaAs have been previously studied [6,13,[17][18][19]. However these material systems are not easily compatible with current electronic or optoelectronic technologies.…”

mentioning

confidence: 99%

Optical properties of CuCl films on silicon substrates

Mitra

O'Reilly

Lucas

et al. 2008

Physica Status Solidi (b)

View full text Add to dashboard Cite

Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III‐Nitrides. However a large lattice constant difference between the III‐Nitride layers and compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ‐CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited CuCl films on Si(100) and Si(111) are studied using temperature dependent photoluminescence (PL) spectroscopy. Four peaks attributed to the free exciton (Z3) (3.203 eV), bound exciton (I1) (3.181 eV), bi‐exciton (M) (3.159 eV) and bound bi‐exciton (N1) (3.134 eV) are identified from the PL spectrum at 10 K. A free exciton peak at 3.230 eV is observed at room temperature. The binding energies for the bound exciton, bi‐exciton and bound bi‐exciton are determined. Parameters, extracted from the temperature dependence of the Z3 PL peak intensity, energy and line‐width, have been compared with CuCl films on different substrates and in single crystal form. The luminescence properties of the CuCl on Si material system are found to compare well with reports for single crystal CuCl. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 99%

Optical properties of CuCl films on silicon substrates

Mitra

O'Reilly

Lucas

et al. 2008

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…At present we have no clear explanations about the origin of this phenomenon. The spectral change in the low energy tail of the Z 3 exciton luminescence is found to take place in a few minutes of photo-irradiation, which is the same time scale of the intensity decrease of the exciton luminescence [7,10]. Since both the intensities of the Raman lines and the free Z 3 exciton luminescence decrease, the effective excitation efficiency and the lifetime of the Z 3 exciton polariton are thought to decrease by the photo-irradiation.…”

Section: Introduction Cucl Is An Ionic Semiconductor Of Cumentioning

confidence: 90%

“…. Characteristics of the films are determined by the growth conditions, such as a substrate surface, a substrate temperature and a growth speed, and have been thought to be free from effects of photoirradiation for the photo-luminescence observation.Recently, we found that a decrease in the exciton luminescence intensity and appearance of new bound exciton luminescence of CuCl bulk and vapor-evaporated films on TiO 2 , Al 2 O 3 and synthesized quartz were induced by photo-irradiation with ultra-violet light pulses at 4.6 K [7,8]. In the series of the experiments we recognized the photo-irradiated spot in thin films by eye after the photo-irradiation.…”

mentioning

confidence: 93%

“…The luminescence labelled Z 3 , which is called the Z 3 exciton luminescence here, is composed of the free Z 3 exciton luminescence and the optical phonon Raman lines [7,10]. The I 1 luminescence labelled by I 1 is due to bound Z 3 excitons.…”

Section: Introduction Cucl Is An Ionic Semiconductor Of Cumentioning

confidence: 99%

“…The temporal change of the exciton luminescence spectrum is shown in Refs. [7] and [8]. Figure 2 shows an optical microscope image of the 50 nm thick CuCl film after 10 h of photoirradiation at 4.6 K. The image is obtained at room temperature.…”

Section: Introduction Cucl Is An Ionic Semiconductor Of Cumentioning

confidence: 99%

See 2 more Smart Citations

Morphology changes of CuCl thin films induced by photo‐irradiation

Hasuo¹,

Shimamoto²,

Fujiwara³

2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We have irradiated CuCl films, which are prepared by a vacuum vapor deposition method, with picosecond light pulses of 82 MHz repetition rate at the photon energy of 3.290 eV. After a long time of photo-irradiation, the photo-irradiated region is recognized by eye for thin films. We observe the surface morphology by atomic force microscopy at room temperature. For a 50 nm thick film, surface structure changes such as surface smoothing, nanometer-scale and micrometer-scale structures formation are observed, which depend on the position in the photo-irradiated region, while such changes are not detected for a 200 nm thick film. The effects of ablation and local heating by the photo-irradiation are excluded for the mechanism of the observed morphology change. The abundance change of Cu and Cl in the film is also detected by the Auger microprobe measurement. . Characteristics of the films are determined by the growth conditions, such as a substrate surface, a substrate temperature and a growth speed, and have been thought to be free from effects of photoirradiation for the photo-luminescence observation.Recently, we found that a decrease in the exciton luminescence intensity and appearance of new bound exciton luminescence of CuCl bulk and vapor-evaporated films on TiO 2 , Al 2 O 3 and synthesized quartz were induced by photo-irradiation with ultra-violet light pulses at 4.6 K [7,8]. In the series of the experiments we recognized the photo-irradiated spot in thin films by eye after the photo-irradiation. Usually, such changes in the exciton luminescence and the sample may be regarded as radiation damage or photo-degradation. However, we observed the well-characterized Z 3 exciton luminescence of the intrinsic nature even after a long time of photo-irradiation without substantial changes of the spectral profile, which is known to reflect the exciton dynamics in the film [6,9,10]. Therefore, observation of the film structure change may be of interest. In this work we present the morphology changes of the CuCl film observed by atomic force microscopy together with the spatially resolved luminescence spectra. The Auger microprobe measurement of the compositional change in the film is also presented.

show abstract

Optical fabrication of wide‐gap semiconductor nanoparticles in superfluid helium

Inaba

Saito

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The nanoparticles have been fabricated from CuCl powder by laser ablation in superfluid helium. We found that most of nanoparticles are CuCl nanocrystals with single‐crystal quality by means of electron diffraction and high‐resolution transmission electron microscope. Moreover, we performed cathodoluminescence spectroscopy of single nanoparticle prepared by laser ablation with use of a scanning electron microscope. I1 bound exciton luminescence which is characteristic in the bulk CuCl was clearly observed in the nanoparticle at 15 K. In addition, we found that the cathodoluminescence spectrum changes by the electron beam irradiation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Exciton luminescence spectra of CuCl films and their change by photo-irradiation

Cited by 12 publications

References 11 publications

Optical properties of CuCl films on silicon substrates

Optical properties of CuCl films on silicon substrates

Morphology changes of CuCl thin films induced by photo‐irradiation

Optical fabrication of wide‐gap semiconductor nanoparticles in superfluid helium

Contact Info

Product

Resources

About