2008
DOI: 10.1002/pssb.200844021
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Optical properties of CuCl films on silicon substrates

Abstract: Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III‐Nitrides. However a large lattice constant difference between the III‐Nitride layers and compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ‐CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited CuCl films on Si(100) and Si(111) are s… Show more

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Cited by 7 publications
(11 citation statements)
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“…It has a high exciton binding energy of~190 meV [2], which is higher than both GaN (25 meV) [3] or ZnO (60 meV) [4]. CuCl has been investigated for some time for its application to optoelectronic devices [5][6][7][8]. The high binding energy gives the possibility of stable, room temperature, UV emission which, together with high biexciton binding energies, enables optoelectronic effects such as bistability and four-wave mixing with the potential for new short wavelength devices [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…It has a high exciton binding energy of~190 meV [2], which is higher than both GaN (25 meV) [3] or ZnO (60 meV) [4]. CuCl has been investigated for some time for its application to optoelectronic devices [5][6][7][8]. The high binding energy gives the possibility of stable, room temperature, UV emission which, together with high biexciton binding energies, enables optoelectronic effects such as bistability and four-wave mixing with the potential for new short wavelength devices [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…2(f) in blue dots. On the other hand, ℏ Γ can be expressed as ℏ Γ( T ) = ℏγ ac T + ℏ Γ op /[exp[ mℏΩ LO /( k B T )] − 1]( m ∈ ) 25 , where Ω LO is the longitudinal optical (LO) phonon frequency, ℏγ ac is the coupling strength of the exciton–acoustic phonon interaction, ℏ Γ op is a parameter describing the strength of the exciton–LO phonon interaction, k B is the Boltzmann constant, and T is the temperature. The curve corresponding to this equation is also plotted in Fig.…”
Section: Discussionmentioning
confidence: 99%
“…2(f) with the parameters in ref. 25 : , and ℏ Γ op = 976 meV. The number m = 3 suggests that the exciton–LO phonon interactions involve almost three phonons 26 .…”
Section: Discussionmentioning
confidence: 99%
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“…CuCl luminescence has been investigated extensively for many years, owing to its interesting structural, optical and electrical properties [1][2][3][4][5][6]. It is an ionic I-VII compound wide direct band gap semiconductor material with the zinc blende structure.…”
Section: Introductionmentioning
confidence: 99%