Abstract:We report the structural and optical properties of ten-period ZnO/Mg x Zn 1−x O multiple quantum wells (MQWs) prepared on the most widely used semiconductor material, Si. The introduction of a nanometer thick high-k Y 2 O 3 transition layer between Si (111) substrate and a ZnO buffer layer significantly improves the structural perfection of the MQWs grown on top of it. The high structural quality of the ZnO/Mg x Zn 1−x O MQWs is evidenced by the appearance of pronounced high order satellite peaks in X-ray crys… Show more
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