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Moore, K. J.; Duggan, G.; Woodbridge, K.; Roberts, Christine Cardinal

doi:10.1103/physrevb.41.1095

Cited by 35 publications

(4 citation statements)

References 14 publications

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“…20. In the case of InGaAs/GaAs coupled-quantum-well structures, a disorder in the growth direction, due to indium flux fluctuations during the growth of different wells, has been claimed to give rise to localized holes, which then recombine with free electrons. 21 This picture cannot apply in our case. Indeed, we have observed exciton localization also in single QW's, where disorder can only occur in the growth plane, due to interface roughness.…”

Section: Discussionmentioning

confidence: 58%

Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

et al. 1996

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Photoluminescence measurements in InGaAs/GaAs quantum wells, both doped and undoped, have provided evidence of a bound exciton of intrinsic origin with peculiar properties. The intensity of this bound exciton exhibits an unusual dependence on the exciting power density. Its relative strength with respect to the free exciton is strongly modified by small changes of the excitation wavelength. Its linewidth closely matches that measured for the heavy-hole free exciton, independent of well width and indium concentration. These features lead one to conclude that the intrinsic bound exciton is localized by a photoassisted interfacial roughness. Possible microscopic origins of such a localizing potential are also tentatively given.

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Section: Discussionmentioning

confidence: 58%

Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

et al. 1996

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“…The forbidden transitions therefore show up. On the other hand, a reduction in the depth of the potential well can substantially reduce the localization tendency, 25,26 which is the case in a tensile strained sample. It explains why no similar forbidden transitions are observed in the tensile strained samples, 15 though the alloy composition fluctuation should also exist under the same samplepreparation condition.…”

Section: Resultsmentioning

confidence: 99%

Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain

Shao

Dörnen

Baars

et al. 2003

Journal of Applied Physics

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Articles you may be interested inOptical determination of the electron effective mass of strain compensated In 0.4 Ga 0.6 As 0.995 N 0.005 ∕ Ga As single quantum well Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures Two types of forbidden transitions are identified in In 1Ϫx Ga x As/InP undoped quantum wells ͑QWs͒ with compressive strain by low-temperature ͑1.8 K͒ magneto-optical absorption. One of them is due to the interband transitions with different principal quantum numbers and is observable mainly in a low magnetic field and the other corresponds to P-and D-type exciton states and gets stronger as the magnetic field increases. By analyzing the forbidden transitions the in-plane effective masses of electrons (m e, * ) and heavy holes (m h, * ) are simultaneously determined, together with the z-direction ͑growth-direction͒ ones (m e,z * ,m h,z * ). The theoretically predicted relation among the electron effective masses ͓Sugawara et al., Phys. Rev. B 48, 8102 ͑1993͔͒, m e,⌫ 6 Ͻm e, * Ͻm e,z * , where m e,⌫ 6 is the band-edge electron effective mass of bulk material, is therefore verified. The difference between the values of m e,z * and m e, * is found to decrease as the strain in the QW drops. [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 130.88.90.140 On: Tue, 25 Nov 2014 12:44:52where E A is the band-edge energy of the QW material, E e,n z and E h,n Ј z are the energy levels of the electrons and holes, respectively, n (nЈ) denotes the principal quantum number of the electron ͑hole͒ energy level, and E r represents the change to the exciton energy caused by the external magnetic field.As well established, E e,n z and E h,n Ј

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“…Practically, however, the SL effects can be disturbed by the fluctuations in the growth parameters such as a layer width. 25 Therefore, another reason for the complex optical spectra could be related to the variation of WL thickness across the QD stacks.…”

Section: B Wl-related Optical Transitionsmentioning

confidence: 99%

Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice

Nedzinskas¹,

Čechavičius²,

Kavaliauskas³

et al. 2009

Journal of Applied Physics

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Articles you may be interested inEffect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction J. Appl. Phys. 107, 074307 (2010); 10.1063/1.3371356Optical transitions and band gap discontinuities of GaInAsSb/AlGaAsSb quantum wells emitting in the 3 μ m range determined by modulation spectroscopy Contactless electroreflectance of In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes grown on InP substrate: Analysis of the wetting layer transition On the modulation mechanisms in photoreflectance of an ensemble of self-assembled In As ∕ Ga As quantum dots Optical transitions in vertically stacked InAs quantum dot ͑QD͒ superlattice ͑SL͒ with and without AlAs barriers were examined by photo-and electroreflectance techniques. The interband transitions corresponding to the QD, wetting layer ͑WL͒, and InAs/GaAs/AlAs SL have been identified. Experimental data and numerical calculations show that blueshifts and enhancement in the intensity of WL-related optical transitions in an InAs/GaAs/AlAs SL originate mainly due to off-center position of the QD layers in the quantum wells. The appearance of multiple WL-related features in the modulated reflectance spectra was revealed and discussed.

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Exciton localization inInxGa1−

Cited by 35 publications

References 14 publications

Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

Exciton localization by potential fluctuations at the interface of InGaAs/GaAs quantum wells

Forbidden transitions and the effective masses of electrons and holes in In1−xGaxAs/InP quantum wells with compressive strain

Modulated reflectance study of InAs quantum dot stacks embedded in GaAs/AlAs superlattice

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