Exciton lifetime and diffusion length in high-purity chemical-vapor-deposition diamond

Morimoto, H.; Hazama, Yuji; Tanaka, Kōichiro; Naka, N.

doi:10.1016/j.diamond.2015.11.010

Cited by 17 publications

(13 citation statements)

References 24 publications

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“…This is why the plot does not look linear to the total impurity concentration. Figure 3a shows normalized PL intensity of freeexciton luminescence following the 2.5 ns pulsed exci-tation in C1, H7 and C6 at 7 K. Detailed experimental setup for this measurement is described elsewhere 18 . After the fast decay due to many-body effects, the 1/e time of the second decay component indicates the time for free excitons to be captured by impurities.…”

Section: B Capture Lifetimesmentioning

confidence: 99%

Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Shimomura

Kubo

Barjon

et al. 2018

Phys. Rev. Materials

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We have quantified substitutional impurity concentrations in synthetic diamond crystals down to sub parts-per-billion levels. The capture lifetimes of electrons and excitons injected by photoexcitation were compared for several samples with different impurity concentrations. Based on the assessed impurity concentrations, we have determined the capture cross section of electrons to boron impurity, σA = 1.3 × 10 −14 cm 2 , and that of excitons to nitrogen impurity, σ ex D = 3.1 × 10 −14 cm 2 . The general tendency of the mobility values for different carrier species is successfully reproduced by including carrier scattering by impurities and by excitons.

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Section: B Capture Lifetimesmentioning

confidence: 99%

Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Shimomura

Kubo

Barjon

et al. 2018

Phys. Rev. Materials

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“…When several dislocations are localized within a spatial resolution of CL, they are counted as one dark spot. Here, the spatial resolution of CL is determined by the diffusion length of the exciton of the homoepitaxial diamond, which is several tens of micrometers for high‐quality diamond . This figure might underestimate DSD.…”

Section: Resultsmentioning

confidence: 99%

Detection of Defects in Diamond by Etch‐Pit Formation

Shimaoka

Ichikawa

Koizumi

et al. 2019

Physica Status Solidi (a)

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Correlation between the reverse current density J R of diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 Â 10 4 -3.0 Â 10 5 cm À2 . Most etch pits are isolated-type, with flat-bottom or point-bottom shape. A typical pit size is 3-5 μm in width and 1-3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show large J R when these etch pit clusters appear. The etch pit cluster density is <10 3 cm À2 .

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“…This test produced no change in resistance within the precision of the experiment on the sample studied. To support this experimental evidence, we make a calculation based on the properties of electron-hole pairs found by previous researchers: with a generous (room temperature) exciton lifetime of 350 ns (Morimoto et al, 2016), and an energy of production of 13.3 eV (Dimitrov et al, 2010), fewer than 600 electron-hole pairs will be activated at any given time within the diamond material.…”

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confidence: 86%

Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

et al. 2017

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Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63 Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59 Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63 Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59 Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

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Exciton lifetime and diffusion length in high-purity chemical-vapor-deposition diamond

Cited by 17 publications

References 24 publications

Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Detection of Defects in Diamond by Etch‐Pit Formation

Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

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