Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride

Zhao, M. G.; Cai, Haiwen; Chen, Disheng; Jiang, Zhengzhi; Ru, Shihao; Lyu, X.; Liu, Xiaogang; Aharonovich, Igor; Gao, Weibo

doi:10.1103/physrevlett.128.216402

Cited by 34 publications

(8 citation statements)

References 49 publications

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“…The question of whether h-BN has also optically addressable spin defects [20] similar to other wide bandgap materials such as diamond [21,22] and silicon carbide [23] has been the subject of recent studies and explored in detail. Although early magneto-photoluminescence (PL) studies reported the nonmagnetic behavior of h-BN quantum emitters [9,24], the spin defects in h-BN materials have been initialized and readout in optically detected magnetic resonance experiments [19,[25][26][27] as well as in a recent magneto-PL experiment [28]. The interface between the stationary spin of these defects and the optical photon is not only important for the transfer of quantum information in quantum networks [29,30] but also for quantum sensing applications [31].…”

Section: Introductionmentioning

confidence: 99%

Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields

Korkut¹,

Sarpkaya²

2022

2D Mater.

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The recent observation of room temperature spin-dependent photoluminescence (PL) emission from hexagonal boron nitride’s (h-BN’s) defect centers motivates for performing a complementary low-temperature photophysical study of quantum emitters under relatively high magnetic fields. Here, we investigate the PL emission dynamics of h-BN’s visible single-photon emitters under an applied out-of-plane magnetic field at cryogenic temperatures. The PL intensity of the emitters in our work strikingly exhibits strong magnetic field dependence and decreases with the increased magnetic field. A substantial decrease in the integrated PL intensity of the emitters by up to one order of magnitude was observed when the applied field is increased from 0T to 7T. The observed reversible photodarkening of PL emission due to the applied magnetic field is in very well agreement with the predictions of a recent joint experimental and theoretical study and can happen only if the spin-selective, non-radiative, and asymmetric intersystem crossing transitions proceed from the triplet excited state to the lowest-lying spin-singlet metastable state and from the metastable state to the triplet ground state. Our results not only shed more light on the light emission paths of defect centers in h-BN but also show the use of the magnetic field as an efficient control knob in the development of magneto-optical devices.

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Section: Introductionmentioning

confidence: 99%

Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields

Korkut¹,

Sarpkaya²

2022

2D Mater.

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“…This makes it very difficult to probe the luminescence of defect centers using any optical methods. For example, the optical detected magnetic resonance (ODMR) method will face many challenges because the hBN-NWs films are very rough, noise will be thus the main factor to saturate the signals of ODMR [74].…”

Section: Softmentioning

confidence: 99%

Growth mechanisms of hBN crystalline nanostructures with rf sputtering deposition: challenges, opportunities, and future perspectives

Hoang¹,

VU²,

NGUYEN³

et al. 2023

Phys. Scr.

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Most hBN nanostructures were fabricated using the chemical method. However, growing by the physical method also has many advantages, they are easy to synthesize this material on a large area with up-scaling setups. Even two-dimensional hexagonal boron nitride is similar to graphene structure, however there is a little work referring to the fabrication process of this material. Hence, a sufficiently detailed report on physically fabricated hBN materials is essential. This review analyzes the results that we have studied over the past ten years with the synthesis and fabrication of this material using physical vapor deposition – RF sputtering, incorporation with other techniques, strongly emphasized on growth mechanisms of this material.

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“…A first-principles study also supports the experimental results of the ODMR signals, 35 confirming a possible magnetic moment on hBN(V B ) in room-temperature. Although relatively low photoluminescence and contrast of ODMR were found, 36 which means that further research is necessary to enhance the ODMR sensitivity in hBN spin defects for quantum computing applications, the appearance of the magnetic moment on the hBN(V B ) becomes a possible focal point to design the thinnest MTJ using 2D materials.…”

Section: Introductionmentioning

confidence: 99%

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride

Harfah,

Wicaksono,

Sunnardianto

et al. 2024

Phys. Chem. Chem. Phys.

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Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride

Cited by 34 publications

References 49 publications

Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields

Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields

Growth mechanisms of hBN crystalline nanostructures with rf sputtering deposition: challenges, opportunities, and future perspectives

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride

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