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The photoluminescence spectroscopy of undoped CdTe crystals provides information on two acceptors which are the main contaminants of as-grown crystals. These acceptors called y and z have their respective ionization energies a t 147 and 108 meV. A complete series o f two hole replicas iu observed for y and only one for z. These acceptors are believed to be due to Cu and A@; impurities. Backdoping experiments with Li and Na give rise to new transitions. From the conduction bandacceptor level transitions, t,he ionization energies are respectively obtained to 57.8 and 58.8 meV. In the case of Li, some extra-lines are tentatively identified as phonon interacting two-hole transitions.La spectroscopie de la photoluminescence de CdTe non dope fournit des informations sur deus nccepteurs qui sont des contaminants du matkriau brut de croissance. Ces accepteurs, appeIBs y et z ont leurs Bnergies d'ionisation respectivement A 147 et 108 meV. Une serie complBte de repliques a deux trous a 6th observee pour y et seulement une replique pour z. Ces accepteurs sont probablement dus aux impuretks Cu et Ag. Des experiences de dopage avec Li et Na donnent naissance a de noovelles transitions. A partir des recombinaisons bande de conduction-niveau accept.eiir, les dnergies d'ionisation ont kt6 respectivernent obtenues 5'7,s e t 58,5 meV. Dam le cas du Li, des ruies supplhmentaires sont attribuees it une transition ? i , deux trous, perturbke par une interaction avec des phonons.
The photoluminescence spectroscopy of undoped CdTe crystals provides information on two acceptors which are the main contaminants of as-grown crystals. These acceptors called y and z have their respective ionization energies a t 147 and 108 meV. A complete series o f two hole replicas iu observed for y and only one for z. These acceptors are believed to be due to Cu and A@; impurities. Backdoping experiments with Li and Na give rise to new transitions. From the conduction bandacceptor level transitions, t,he ionization energies are respectively obtained to 57.8 and 58.8 meV. In the case of Li, some extra-lines are tentatively identified as phonon interacting two-hole transitions.La spectroscopie de la photoluminescence de CdTe non dope fournit des informations sur deus nccepteurs qui sont des contaminants du matkriau brut de croissance. Ces accepteurs, appeIBs y et z ont leurs Bnergies d'ionisation respectivement A 147 et 108 meV. Une serie complBte de repliques a deux trous a 6th observee pour y et seulement une replique pour z. Ces accepteurs sont probablement dus aux impuretks Cu et Ag. Des experiences de dopage avec Li et Na donnent naissance a de noovelles transitions. A partir des recombinaisons bande de conduction-niveau accept.eiir, les dnergies d'ionisation ont kt6 respectivernent obtenues 5'7,s e t 58,5 meV. Dam le cas du Li, des ruies supplhmentaires sont attribuees it une transition ? i , deux trous, perturbke par une interaction avec des phonons.
The photoluminescence of high purity n-type CdTe single crystals ( n = 2.9 x 1014 0 1 1 1~~) a t liquid helium temperature is studied at different excitation intensities. Emissions due to the recombination of free excitons and excitons bound to neutral donors, ionized donors, and neutral acceptors are discussed as well as the transitions of free carriers to various impurities. Other impurity related spectral features are observed within the range of 120 meV from the band edge and their origin is described in analogy to the present knowledge of the spectra of 111-V and other 11-VI compounds.Photolumineszenzspektren von reinem CdTe (Elektronenkonzentration = 2,9 x 1014 cm-s) werden bei Heliumtemperatur und in Abhangigkeit von der Anregungsintensitat gemessen. Die Emissionen, die auf Rekombinationen von freien Exzitonen, Exzitonen an neutralen und ionisierten Donatoren und an neutralen Akzeptoren zuriickzufiihren sind, und solche, die auf Ubergiinge freier Ladungstriiger an Storstellen zuriickzufiihren sind, werden diskutiert. Andere Teile der Spektren (bis zu 120 meV von der Bandkante) werden in Analogie zu Spektren von 111-V und anderen 11-VI Verbindungen interpretiert.
The set of valence-band parameters p , 6, R,, introduced in the Baldereschi-Lipari model allows the determination of several energy levels of shallow acceptors in a semiconductor. A critical examination of the methods of determining these parameters is presented. These values are calculated for CdTe using Lipari's analytical expressions for the electronic state energies and experimental data from luminescence and IR spectra of five acceptor impurities. The main conclusions are: 1) the restriction t o transition energies (the only energies directly obtained from the experimental spectra) leads to more than one solution for p, 6, and R,; 2) when the energy levels of three "un-
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