Optical Determination of the Valence‐Band Parameters in CdTe

Abstract

The set of valence-band parameters p , 6, R,, introduced in the Baldereschi-Lipari model allows the determination of several energy levels of shallow acceptors in a semiconductor. A critical examination of the methods of determining these parameters is presented. These values are calculated for CdTe using Lipari's analytical expressions for the electronic state energies and experimental data from luminescence and IR spectra of five acceptor impurities. The main conclusions are: 1) the restriction t o transition energies (the only energies directly obtained from the experimental spectra) leads to more than one solution for p, 6, and R,; 2) when the energy levels of three "un-

Holes localized in nanostructures in an external magnetic field: g-factor and mixing of states

“…In all the remaining cases, the ground state is doubly degenerate and the g factor is determined from formula (10). The calculation was made for several sets of parameters γ and γ 1 corresponding to AlAs [23], CdTe [30], GaAs [23], and InAs [23].…”