Excitation Frequency Effects on Stabilized Efficiency of Large-Area Amorphous Silicon Solar Cells Using Flexible Plastic Film Substrate

Takano, Akihiro; Tanda, M.; Shimosawa, Makoto; Wada, Takehito; Kamoshita, Tomoyoshi

doi:10.1143/jjap.42.l1312

Cited by 12 publications

(4 citation statements)

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“…Among metallic materials, stainless steel and molybdenum foils have been utilized as substrates in the fabrication of thin-film transistors (Theiss and Wagner, 1996;Wu et al, 1997;Howell et al, 2000;Wu et al, 2002;Park et al, 2003) and solar cells (Yang et al, 2003). A number of plastic materials (organic polymers) also have been tested successfully in a variety of thin-film applications (Constant et al, 1994;Young et al, 1997;Burns et al, 1997;Burrows et al, 1997;Gleskova et al, 1998;Parsons et al, 1998;Lueder et al, 1998;Thomasson et al, 1998;Sandoe, 1998;Carey et al, 2000;Sazonov et al, 2000;Boucinha et al, 2000;Kane et al, 2001;Ichikawa et al, 2001;Hsu et al, 2002a;Brida et al, 2002;Takano et al, 2003;Cheng et al, 2004;Gelinck et al, 2004;Shahrjerdi et al, 2004;Nomura et al, 2004;Monacelli et al, 2004;Choi et al, 2004).…”

Section: Introductionmentioning

confidence: 99%

Mechanics of thin-film transistors and solar cells on flexible substrates

Glesková¹,

et al. 2006

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When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication process. Amorphous silicon thin-film transistors and solar cells respond differently to externally applied tensile strain. The elastic deformation of the transistor is correlated with small increase in the electron mobility. When the tensile strain reaches ~ 0.34%, crack formation starts and causes an abrupt change in the transistor performance. The performance of solar cells, on the other hand, does not change for tensile strain up to ~ 0.7%. At larger strain the short-circuit current, open-circuit voltage, fill factor, and the efficiency gradually decrease

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Section: Introductionmentioning

confidence: 99%

Mechanics of thin-film transistors and solar cells on flexible substrates

Glesková¹,

et al. 2006

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“…[5][6][7][8][9][10] We controlled not only excitation frequency but also reaction pressure and plasma electrode geometries to have highquality amorphous silicon and related thin films at high deposition rates. [11][12][13][14] Eventually, we achieved fivefold faster production using the same apparatus without deteriorating solar cell performance.…”

Section: Introduction 11 Flexible Solar Cellmentioning

confidence: 99%

Acceleration test using combined stresses for flexible solar modules

Takano¹,

Nakamura²,

Fukuda³

et al. 2018

Jpn. J. Appl. Phys.

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Production technologies of large-area, light-weight flexible thin film silicon solar cells and modules using 1-m-wide and 3,000-m-long heat-resistant plastic film substrates were developed. A unique monolithic device structure having through-hole contacts formed on a flexible plastic film was also developed. The unique solar cell device structure enables us to cut and connect flexible film cells in order to easily customize the voltage and current specifications of products. Durable solar cell and module designs and effective acceleration tests were established. In particular, an acceleration test that combines damp heat and a current injection test was established. Approximately 3,000 h of damp heat and current injection corresponds to 20 years of outdoor exposure in Japan. In this paper, we propose a pressure cooker and current injection test to achieve a much faster acceleration test. 300 h of pressure cooker and current injection test is approximately equivalent to 3,000 h of damp heat and current injection test and 20 years of outdoor exposure in Japan.

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“…For the optimization of solar cells based on hydrogenated amorphous silicon (a-Si:H), there is a strong need to characterize the light-induced degradation in a-Si:H layers [1][2]. So far, the light-induced degradation in the a-Si:H has been reported to show a good correlation with the SiH 2 bond density in the a-Si:H network and the light-induced defect formation is enhanced in the a-Si:H layers with higher SiH 2 densities [3][4][5].…”

Section: Introductionmentioning

confidence: 99%