Exchange bias of ultrathin CoO/Co bilayers on Ge(111) and Ge(100) surfaces

Chang, H. W.; Tsay, Jyh-Jong; Chang, Shin Chen; Chuang, Po Ching; Yao, Y. D.

doi:10.1016/j.jallcom.2013.01.168

Cited by 7 publications

(1 citation statement)

References 32 publications

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“…19,20 The enhanced H E could be attributed to the increasing anisotropy energy of AFM layer K AFM and the increasing number of pinned uncompensated spins at the interface. 4,16 By further increasing the CoO thickness (x=40 ML), the H E at 170 K is reduced. For continuous AFM/FM layers, the increase of the AFM domain size is often observed and the related H E is commonly reduced due to the reduction of both the amount of AFM domain walls and the associated net uncompensated AFM magnetic moments.…”

Section: Methodsmentioning

confidence: 99%

Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

Chang

Tsay

et al. 2016

AIP Advances

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Variations of the blocking temperature and related structures for CoO/Co/Ge(100) films are investigated by employing reflection high energy electron diffraction, Auger electron spectroscopy, and surface magneto-optic Kerr effect measurements. By increasing the CoO thickness, the blocking temperature is smaller than the Neel temperature of CoO. The monotonous increase of the blocking temperature is mainly attributed to the increasing thermal stability of the antiferromagnetic grains by way of increasing the antiferromagnetic thickness. The deviation of the blocking temperature from the linear relation and the full widths at half maximum of the diffraction spots show a similar trend. The minimums appear around 25 monolayer of CoO and are related to the formation of larger grains.

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Section: Methodsmentioning

confidence: 99%

Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

Chang

Tsay

et al. 2016

AIP Advances

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DFT characterization of nanostructured germanium surfaces induced by cobalt atoms

Stephan

Hanf

Wetzel

et al. 2013

Surf. Interface Anal.

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By deposition in ultra‐high vacuum of cobalt on a Ge(111)–c(2 × 8) surface, Mocking et al. obtained a bold13×bold13−R13.9° surface reconstruction. In the present paper, we analyse the related atomic structure, proposed by these authors, by means of density functional theory calculations. The surface presents ordered clusters that consist of six Ge atoms arranged in a triangle, lying above three Co atoms. The latter are located at substitutional positions within the top plane of the Ge(111) first bilayer. These clusters are similar to what is obtained on part of the Co‐induced Si(111) bold13×bold13−R13.9° surface. For this surface, the clusters are terminated either by six Si atoms or by one, two or three adatoms above the six Si atoms. As the Co–Ge clusters systematically display six protrusions in the scanning tunnelling microscopy measurements by Mocking et al., we investigated why Ge adatoms are not present. Comparison of the Gibbs energy, interatomic distances, as well as charge density indicates that Ge adatoms on top of Co‐Ge clusters are less stable than Si adatoms in the Co‐Si system. Copyright © 2013 John Wiley & Sons, Ltd.

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