Excess Bismuth-Dependent Characteristics of Chemical Solution Deposited Bi3.15La0.85Ti3O12 Thin Films

Lee, Nam-Yeal; Lee, Won–Jae; Ryu, Sang-Ouk; You, In–Kyu; Yoon, Sung‐Min; Cho, Seong M.; Shin, Woong‐Chul; Yu, Byoung–Gon; Kim, Jindong

doi:10.1080/743845168

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2004

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“…We observed that BLT thin films showed significant differences depending on in- termediate RTA temperature and excess Bi content in BLT films in the previous report [11,12]. Therefore, in this study, the composition of excess Bi was maintained to 5.5 mol% and an intermediate RTA process was not used for all samples.…”

Section: Resultsmentioning

confidence: 88%

Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

et al. 2004

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The phase formation and electrical properties of (Bi,La) 4 Ti 3 O 12 (BLT) thin film and V-, Sm-doped BLT thin films prepared by the chemical solution deposition method on Pt/TiO 2 /SiO 2 /Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin films dramatically varied with V-and Sm-doping. The crystallinity and grain size of BLT thin films were definitely increased by V-and Sm-doping into BLT films, which resulted in the enhancement of remanent polarization in doped BLT films. The remanent polarization (Pr) of Sm-doped BLT films annealed for 3 min by an RTA system was about 9 µC/cm 2 . The V-and Sm-doped BLT films also exhibited good fatigue characteristics under bipolar stressing to 10 10 cycles.

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Section: Resultsmentioning

confidence: 88%