2018
DOI: 10.1007/s10854-017-8475-0
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Excellent dielectric performance and nonlinear electrical behaviors of Zr-doped CaCu3Ti4O12 thin films

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Cited by 11 publications
(6 citation statements)
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“…also revealed the presence of TiO 2 (PDF 65-1118) and CuO (PDF 89-5899) phases. Peaks of CuO could also be found in the samples due to the segregation of CuO at high temperatures (>1000 ºC), forming a liquid phase during the sintering treatment, in agreement with previous reports [2,11,35,42]. The segregation of the CuO phase could also justify the presence of TiO obtained through refinement are [43].…”
Section: Resultssupporting
confidence: 90%
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“…also revealed the presence of TiO 2 (PDF 65-1118) and CuO (PDF 89-5899) phases. Peaks of CuO could also be found in the samples due to the segregation of CuO at high temperatures (>1000 ºC), forming a liquid phase during the sintering treatment, in agreement with previous reports [2,11,35,42]. The segregation of the CuO phase could also justify the presence of TiO obtained through refinement are [43].…”
Section: Resultssupporting
confidence: 90%
“…In view of this, chromium addition was efficient in reducing value at 1 kHz from 0.35 for CCTO to 0.20 for Cr_025 tan 𝛿 and 0.50 for Cr_050. The values obtained were higher than those for CaCu 3 Ti 4 O 12 (0.108 tan 𝛿 [30] and 0.194 [31]) and were also much higher than those with doping of Zn(II) (0.017) [30], Sm(III) and Mg(II) (0.039) [31] and Zr(IV) (0.028) [2]. However, evaluating the value alone tan 𝛿 is not the most appropriate method without considering the values of the coefficient of nonlinearity and electric breakdown field strength at the same time, (5,62; 1832 V/cm) [30] and (5,31; 1656 V/cm) [31], respectively, which were all lower than those obtained in this work.…”
Section: Resultsmentioning
confidence: 62%
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“…Xu et al . reported a very high dielectric permittivity value of 7591 and a very low tanδ value of 0.023 at 1 kHz for CaCu 3 Ti 3.8 Zr 0.2 O 12.…”
Section: Doping Of Cctomentioning
confidence: 99%