Examining the role of ultra-thin atomic layer deposited metal oxide barrier layers on CdTe/ITO interface stability during the fabrication of solution processed nanocrystalline solar cells

Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

“…16,17 70 mmol) and thiourea (1.97 g, 26 mmol) into N,Ndimethylformamide (10 mL, DMF) and then magnetically stirring for 2 h at room temperature. A CZTS thin lm with a thickness of $1.1 mm was fabricated by spin-coating the CZTS precursor solution on molybdenum (Mo)-coated soda lime glass (SLG) substrates at a rotation rate of 3000 rpm for 30 s followed by drying in air at 300 C for 3 min.…”

Thermally Stable Solution Processed Vanadium Oxide as a Hole Extraction Layer in Organic Solar Cells

“…To overcome some of these issues thin metal oxides such as MoO 3 , WO 3 , NiO, and V 2 O 5 have been used; these materials have been shown to exhibit performances that are similar to or better than OPVs with an interfacial PEDOT:PSS layer [ 15 , 16 , 17 , 18 ]. Not only are these materials of interest in organic photovoltaics because of their unique electronic properties and chemical stability, they are also being used in other photovoltaic technologies such as CiGS, and CdTe [ 19 , 20 , 21 , 22 ]. However, like PEDOT:PSS the presence of water can lead to changes at the interface between metal oxides and organic semiconductors, due to the intercalation of water within metal oxide clusters leading to changes within the energy level structure [ 23 ].…”

Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

“…[15][16][17][18] Besides passivation, ALD coated films have also been applied to reduce the atomic inter-diffusion between different layers in PV devices. 19,20 Here, we apply a thin ALD coated TiO 2 film between the CZTSSe and CdS layers in CZTSSe PV devices in order to passivate the CZTSSe surface and reduce the V OC deficit. The resulting CZTSSe PV devices, with and without ALD TiO 2 , are characterized in detail via measurements of current-voltage response, capacitance profiling, and admittance spectroscopy at low temperatures.…”