EXAFS study of chemical short-range order in amorphous NixTi1−x alloys

Chartier, Patrick; Mimault, J.; Girardeau, T.; Jaouen, M.; Tourillon, G.

doi:10.1016/0925-8388(93)90649-8

Cited by 10 publications

(2 citation statements)

References 22 publications

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“…The experimental results were fitted by minimizing the variance parameter V (equation ( 3)). The variance calculation is based on the least-squares fitting of the nodal-point positions [14]. The solutions reported in table 1 were obtained when the variance parameter was less than twice its minimum value.…”

Section: Resultsmentioning

confidence: 99%

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X-ray absorption fine structure of ion-implanted semiconductors

Indrea

Jaouen

Chartier

1997

Semicond. Sci. Technol.

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The local environments around mercury atoms in the narrow-bandgap Hg 0.79 Cd 0.21 Te semiconductor alloys have been deduced from extended x-ray absorption fine-structure (EXAFS) analysis. A nonlinear least-squares fitting was applied in order to determine the coordination number, the bond distances and the Debye-Waller factors for the nearest and the next-nearest neighbours around the Hg atom. While ordering has been found for the first coordination shell which consists of four tetrahedrally coordinated Te atoms at 0.280 nm, the next-neighbour shell (consisting of 12 cations) is split into two peaks at the bond lengths of 0.454 nm for Hg-Cd and 0.459 nm for Hg-Hg. Local structure parameters for Krand Xe-ion-implanted Hg 0.79 Cd 0.21 Te crystals are also analysed.

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Section: Resultsmentioning

confidence: 99%

“…The EXAFS data were analysed by means of standard methods described in detail in reference [14]. The absorption threshold of the Hg L III edge was taken to be at E 0 = 12 284 eV.…”

Section: Experimental Measurements and Data Analysismentioning

confidence: 99%