Evolution of texture at growth of titanium nitride films prepared by photon and ion beam assisted deposition

Abstract

The effect of the film thickness on the evolution of texture of polycrystalline titanium nitride films grown by photon and ion beam assisted deposition has been investigated. The layers were deposited in high-vacuum on (111)Si with the N-ion energy constant at 2 keV and the incident ion/titanium flux ratio constant at 0.66 ions/atom. X-ray pole figure measurements show that the biaxial {001} texture is changed to the biaxial {111} texture with an increase of the film thickness. The texture evolution is explained by the existence of open channeling directions and the minimization of the elastic deformation energy.

Tungsten doped chromium nitride coatings

“…Results reveal that the lattice constant increased from 0.416 to 0.421 nm with increasing W content. Hones et al [12] investigated the electronic structure and mechanical properties from the chromium-tungsten nitride system and reported that the lattice parameter as a function of the tungsten content in [16,17]. In the present study, the B1 fcc structure of Cr 1 − x W x N y films (Fig.…”

Ni-free superelastic binary Ti–Nb coatings obtained by DC magnetron co-sputtering

“…(i) The preferred orientations of films are decided by the lowest overall energy conditions between the strain and surface energies [18][19][20]. (ii) The preferred orientations of films depend on the atomic bombardment and mobility [21][22][23].…”

Ion assisted deposition of thin layers

“…4) It should be noted t h a t the evolution of the texture of the TiN crystallites on S i ( l l l ) is also depended on the film thickness [8].…”

“…In summary, the results show t h a t the low energy ion assisted deposition is advantageous for preparing epita.xial GaN films. 6 S u m m a r y Three important effects during the IBAD of thin nitride films have been presented. The bia.xiaI "alignment of TiN on S i ( l l l ) films prepared by nitrogen ion b e a m assisted deposition a t room temperature was studied.…”

“…In o r d e r t o manipulate in-plane alignment of titanium nitride film on silicon substrate, titanium films were prepared by nitrogen ion assisted deposition a t room temperature under selected incident angles of the assisting ion beam. Figures 2a,b show X-ray pole figures obtained from titanium nitride films prepared by reactive deposition without ion irradiation and with perpendicular ion irradiation (a = 0°), respectively [6].…”