Evolution of superconductivity in LaO
 1−x
 F
 x
 BiS
 2
 prepared by high-pressure technique

Deguchi, K.; Mizuguchi, Yoshikazu; Demura, Satoshi; Hara, Hiroshi; Watanabe, Tohru; Denholme, Saleem J.; Fujioka, M.; Okazaki, Hiroyuki; Ozaki, Toshinori; Takeya, Hiroyuki; Yamaguchi, Takahide; Miura, Osuke; Takano, Yoshihiko

doi:10.1209/0295-5075/101/17004

Cited by 125 publications

(128 citation statements)

References 27 publications

(5 reference statements)

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“…The partial substitution of O by F is useful for this carrier doping. Although, optimal fluorine concentration is estimated to be around x = 0.5, the obtained superconducting transition temperature (T c ) is completely different between conventional solid state reactions and high pressure synthesis [2,[13][14][15]. In the case of the conventional solid state reaction, the T c of LaO 0.5 F 0.5 BiS 2 is obtained at only 3 K. On the other hand, the T c largely increases above 10 K by using high pressure synthesis.…”

Section: Introductionmentioning

confidence: 96%

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

Fujioka

Nagao

Denholme

et al. 2014

Applied Physics Letters

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We demonstrated a pressure-induced phase transition from a low-T c phase (3.5 K) to a high-T c phase (8.7 K) in single crystalline PrO 0.5 F 0.5 BiS 2 . The high-T c phase is easily observed even at 0.7 GPa by uniaxial pressure obtained from a geometric effect of a single crystal with an extremely-thin thickness. For this phase transition, superconducting anisotropy and the coherence length along the c axis change from γ = 20 to 9.3 and from ξ c = 0.56 to 0.71 nm respectively. It is suggested that a shrinkage in the c lattice constant by applied uniaxial pressure enhances the three dimensionality in the superconducting state.

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Section: Introductionmentioning

confidence: 96%

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

Fujioka

Nagao

Denholme

et al. 2014

Applied Physics Letters

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“…Subsequently, following ideas from oxypnictides, LaOBiS 2 is traced to be superconducting when doped with F at the place of O. [7][8][9][10][11][12][13][14][15] Superconductivity is also confirmed when La is replaced by the rare earth elements Nd, Ce, Pr and Yb with corresponding T c = 5.6 16 (5.2K), 17 3.0, 18 5.5 K 19 and 5. 4 K 9 respectively.…”

Section: Introductionmentioning

confidence: 99%

Structural, electromagnetic and thermoelectric properties of Bi₄O₄S₃superconductor

Srivastava¹,

Shruti²,

Patnaik³

2014

Supercond. Sci. Technol.

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We report on the synthesis and extensive characterization of layered Bi 4 O 4 S 3 superconductor. This is the optimally doped sample with T c ~5. While the parent compound is found to be semiconducting, the electrical resistivity of Bi 4 O 4 S 3 exhibits T 2 dependence in a small temperature range between 25 and 50 K. The typical dome structure for variation of T c with dopant concentration is not observed. From the magneto-transport data H c2 for Bi 4 O 4 S 3 is estimated to be ~2.75T with WHH approximation and the corresponding coherence length is ~110Å. Support for multiband signatures is not seen from magneto-resistance data. RF susceptibility data fits well for S-wave isotropic gap with gap value higher than BCS strong coupling limit. Hall measurements confirm dominance of electronic transport with charge carrier density of 4.405×10 19 cm −3 at 10 K. The experimental value of Seebeck coefficient at 35K is well in accord with the calculated value deduced by using density of charge carriers from Hall experiments. The Sommerfeld constant γ is estimated to be ~ 1.113 mJ/K 2 mol. Evidence for thermally activated flux flow is observed and the pinning potential is found to scale as B -0.3 for B < 0.1T and B -1.99 for B > 0.1T.

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“…To induce bulk superconductivity, high pressure annealing is effective. 2,10) Using the high-pressure technique, the onset of T c of LaO 0.5 F 0.5 BiS 2 reaches a value of 11 K. It was suggested that the crystal structure obviously changed after high-pressure annealing.…”

Section: Introductionmentioning

confidence: 99%

Increase in T c and Change of Crystal Structure by High-Pressure Annealing in BiS2-Based Superconductor CeO0.3 F 0.7BiS2

Kajitani

Hiroi

Omachi

et al. 2014

J Supercond Nov Magn

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Recently, several types of BiS 2 -based superconductor such as Bi 4 O 4 S 3 , REO 1-x F x BiS 2 (RE: rare earth) and Sr 1-x La x FBiS 2 have been discovered. In this study, we have investigated the crystal structure and the superconducting properties for two kinds of polycrystalline samples (As-grown and high-pressure-annealed samples) of the BiS 2 -based superconductor CeO 0.3 F 0.7 BiS 2 . We found that both the As-grown and the high-pressure-annealed CeO 0.3 F 0.7 BiS 2 samples show bulk superconductivity. A higher T c was observed in the high-pressure-annealed sample.The T c of CeO 0.3 F 0.7 BiS 2 increased from T c zero = 2.7 K to T c zero = 3.7 K by high-pressure annealing. The lattice constant of a and c axis did not show remarkable differences between the As-grown and the high-pressure-annealed samples. Nevertheless, the peak symmetry of the (200) peak seemed to become more symmetric while the (004) peak did not show such a difference, indicating that the crystal structure within the ab plane changed to a higher-symmetric phase, a perfect tetragonal, by high-pressure annealing in CeO 0.3 F 0.7 BiS 2 .2

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Evolution of superconductivity in LaO _1−x F _x BiS ₂ prepared by high-pressure technique

Cited by 125 publications

References 27 publications

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

Structural, electromagnetic and thermoelectric properties of Bi₄O₄S₃superconductor

Increase in T c and Change of Crystal Structure by High-Pressure Annealing in BiS2-Based Superconductor CeO0.3 F 0.7BiS2

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Evolution of superconductivity in LaO 1−x F x BiS 2 prepared by high-pressure technique

Cited by 125 publications

References 27 publications

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

High-Tc Phase of PrO0.5F0.5BiS2 single crystal induced by uniaxial pressure

Structural, electromagnetic and thermoelectric properties of Bi4O4S3superconductor

Increase in T c and Change of Crystal Structure by High-Pressure Annealing in BiS2-Based Superconductor CeO0.3 F 0.7BiS2

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Evolution of superconductivity in LaO _1−x F _x BiS ₂ prepared by high-pressure technique

Structural, electromagnetic and thermoelectric properties of Bi₄O₄S₃superconductor