Evolution of structural and optical properties of nanostructured silicon carbon films deposited by plasma enhanced chemical vapour deposition

Ambrosone, G.; Basa, D. K.; Coscia, U.; Passacantando, M.

doi:10.1016/j.tsf.2012.03.027

Cited by 4 publications

(2 citation statements)

References 26 publications

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“…Further it has been reported [7,22] that the decrease in Si crystallite size in SiC matrix can give rise to a quantum confinement effects of carriers within the crystallites, leading to an increase of optical band gap. Clearly, the increase in E 04 can be attributed to the combined effects due to the increase in carbon and hydrogen contents [20,21,23] as well as the decrease in size of the nanocrystallites [12,22]. The phototransport properties have been evaluated from SSPC measurements performed by illuminating the samples with monochromatic radiations in the visible region (460-660 nm range) with different values of the volume generation rate G of carriers given by G= ηF (1-R) [1-exp(-αd)]/d .…”

Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

Structural and photoconductivity properties of silicon carbon thin films

Coscia

Ambrosone

Basa

et al. 2014

Phys. Status Solidi C

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Nanostructured films composed of silicon crystallites dispersed in an hydrogenated amorphous silicon carbon matrix have been deposited by plasma enhanced chemical vapour deposition from silane‐methane mixtures diluted in hydrogen by varying the rf power. Compositional, structural, optical and photoconductivity properties of the films have been investigated. The increase in rf power in the 40‐80 W range enhances the incorporation of carbon and hydrogen in the amorphous matrix and decreases the volume fraction and size of the silicon crystallites leading to an enlargement of the optical band gap from 2.07 to 2.20 eV. Steady state photoconductivity measurements, performed under monochromatic radiations in the visible range, have demonstrated the occurrence of monomolecular recombination kinetics in the samples under illumination and that the mobility‐lifetime product of the free electrons as a function of the optical gap decreases from 1.9 × 10–7 to 2.5 × 10–9 cm2V–1 as in the case of device quality films deposited by silane‐methane mixtures diluted in hydrogen. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Results and Discussion The Carbon Content X = [C]/([c]+[si])mentioning

confidence: 99%

Structural and photoconductivity properties of silicon carbon thin films

Coscia

Ambrosone

Basa

et al. 2014

Phys. Status Solidi C

Self Cite

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“…When associated with the phonon confinement model (4,5) the crystallite size can be estimated on the porous layer and it is directly related with the photoluminescence generated that is extended from 540 to 850nm. The origin of this phenomenon is mainly attributed to quantum confinement effects in nanometer size silicon crystallite (6,7) . The model assumes that the carriers are confined in the silicon nanocrystals and the increase of its band gap occurs with the reduction of crystallites size, allowing direct transitions due to break of the selection rules.…”

Section: Introductionmentioning

confidence: 99%