Multiwalled carbon nanotube sheets of relatively large area have been grown on a sapphire substrate by chemical vapor deposition at the substrate temperature of 500 and 750°C. The photoconductivity measurements, performed under white light and monochromatic radiation in the ultraviolet–visible–near infrared region, show that the highly defective sample grown at 500°C has a higher photosensitivity, thus revealing the crucial role of structural defects in determining the overall photoresponse of the nanotube’s sheets. The spectral photoresponse of these nanostructured films increases with the increase in photon energy, and is strongly correlated to the absorbance. The photoconductivity properties of these materials are favorable in potential development of large area light sensors as well as optoelectronic nanodevices.
The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.
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