Evolution of patterning materials towards the Moore’s Law 2.0 Era

Abstract

In this paper, the utilization of lithographic materials for semiconductor patterning applications based on optical and EUV radiation sources is reviewed. Photoresist platforms including novolac, chemically amplified, chain scission, molecular and inorganic materials are discussed in relation to their chemistry, design, processing, and performance. If the focus of Moore's Law 1.0 was on laterally scaling the number of components on a single chip, Moore's Law 2.0 can be understood as the coming era of 3D scaling, where the improved performance from 2D shrinking is replaced by integrated AI, 3D Packaging, 3D transistors and new types of memory, among other enabling enablers. As the historical patterning challenges faced by the lithographic industry to scale down semiconductor devices over multiple technology nodes are reviewed from a materials perspective, insight is given regarding future patterning materials utilization and the importance of back-implementing leading-edge materials for Moore's Law 2.0 patterning applications.

Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography

“…As predicted by Moore’s Law, the density of integrated circuits (ICs) has been improved exponentially for high-performance semiconductor devices and the photolithographic fabrication of nanoscale semiconductor devices requires increasingly high-resolution techniques. , Extreme ultraviolet lithography (EUVL) and electron beam lithography (EBL) are key advanced lithographic technologies for the production of feature sizes lower than 20 nm. − As the feature size decreases, the requirements for resists’ performance have gradually increased. It is still a great challenge to develop resist materials fulfilling all the requirements for advanced lithography such as high resolution (R) and sensitivity (S), low line edge roughness (LER), high etching resistance, and low outgassing. − The traditional polymeric materials are unfavorable for achieving high-resolution lithographic patterns with low LER due to their characteristics, such as polydispersity, large molecular size, chain entanglement, and poor compatibility with photoacid generators (PAGs). − …”

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

“…Unlike the preceding 193 nm ArF immersion lithography, incorporating EUV lithography (EUVL) into HVM, however, has not been an easy transition. [1] One of the critical challenges that must be addressed for the EUVL process is a need for suitable photoresist that enables highperformance patternability at EUV wavelength. Traditional photoresists like well-known chemically amplified resists (CARs), which are predominantly made of carbon and oxygen as elements, exhibit poor intrinsic EUV sensitivity, resulting in a lower throughput.…”

“…Unlike the preceding 193 nm ArF immersion lithography, incorporating EUV lithography (EUVL) into HVM, however, has not been an easy transition. [ 1 ]…”

Photoresist shrinkage observation by a metrological tilting-AFM

“…LER indicates that both ends of a line pattern that are designed as straight lines actually have roughness. LER affects device performance and manufacturing yield (e.g., via defect generation) and is a performance metric for various technologies such as extreme ultraviolet scanners [3], photoresist materials [4,5], and etching technology [6,7]. The progress in pattern shrinkage has led to an increase in the relative size of the LER to the critical dimension (CD), and the accuracy requirements for the LER measurement technology have increased accordingly.…”