Evolution of MBE HgCdTe defect structure studied with ion milling method

Abstract

Abstract. In this paper, is shown how ion milling can assist in assessing the defect structure of MCT by revealing the residual doping, and establishing the minimum level of donor concentration N md , which is needed for obtaining n-regions with a reproducible n value. For this purpose, a study of the electrical properties of ion-milled LWIR n-type MCT films, un-doped and doped with indium with the concentration N In = 5 × 10 14 -10 17 cm −3 is proposed .