An ion milling-assisted study of defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates was performed. The films appeared to contain initially neutral Te-related defects with concentration of 10 17 cm −3 , typical of HgCdTe. The concentration of residual donors was found to be quite low ((3-8) × 10 14 cm −3 ). Specific to HgCdTe/Si technology appeared to be a considerable number of stacking faults, which affected the carrier mobility in n-type material. These defects can be annealed in He atmosphere at 230 • C, and after ion milling the electrical parameters of n-type HgCdTe/Si films approach those of high-quality bulk crystals.

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A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

Results of the studies of optical properties of anti-reflective glasses with various texturization patterns, which were used as a coating for crystalline silicon solar cells, are presented. It was found that glass samples sorted by their optical transmittance demonstrated the same order as when sorted by their solarcell short-circuit current enhancement parameter. The value of the latter depended on the parameters of texturization, such as the surface density of inclusions and their profile, and the depth of etching pits. A 2% relative increase of the solar cell efficiency was obtained for the best glass sample for null degree angle of incidence, proving enhanced light trapping properties of the studied glass.