Evolution of GaAs nanowire geometry in selective area epitaxy

Abstract

Nanowires (NWs) grown via selective area epitaxy (SAE) show great promise for applications in next generation electronic and photonic devices, yet the design of NW-based devices can be complicated due to the complex kinetics involved in the growth process. The presence of the patterned selective area mask, as well as the changing geometry of the NWs themselves during growth, leads to non-linear growth rates which can vary significantly based on location in the mask and the NW size. Here, we present a systematic study of the evolution of GaAs NW geometry during growth as a function of NW size and pitch. We highlight a breakdown of NW uniformity at extended growth times, which is accelerated for NW arrays with larger separations. This work is intended to outline potential fundamental growth challenges in achieving desired III–V NW array patterns and uniformity via SAE.

Evolution of the Length and Radius of Catalyst-Free III–V Nanowires Grown by Selective Area Epitaxy

“…In this work, we try to understand the kinetics of the axial and radial growth of III–V NWs in the true SAE growth mode of catalyst-free NWs 4 on patterned substrates with regular arrays of lithographically defined pores. 4−9 Most importantly, we study theoretically the time evolution of the mean length and radius of SAE NWs versus the growth parameters and epitaxy technique. According to the experimental data, 5,7−9 both the length L and radius R of the SAE-grown NWs usually increase with the growth time, while the radius of Au-catalyzed VLS III–V NWs is fixed by the initial size of the growth seeds and stays constant in most cases.…”

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

“…Confinement of the growth within openings defined in the mask by top-down patterning imposes particular constraints on the growth and development of the resulting structures, possibly leading to interesting morphologies. GaAs nanowires have been successfully obtained on (111)B GaAs and Si substrates by Metal-Organic Chemical Vapor Deposition (MOCVD) [1][2][3] , by opening apertures in the oxide layer with widths on the order of 100 nm. By extending the slits in the <11-2> direction up to several microns, vertical nanomembranes (NMs) are obtained, as reported in the literature for both MOCVD 4,5 and Molecular Beam Epitaxy (MBE) 6 .…”

Ag nanoparticle catalyst based on Ga2O3/GaAs semiconductor nanowire growth by VLS method

“…Especially, the Ga 2 O 3 /GaAs NW growth have attracted substantial attention for various applications on nanoelectronics, optoelectronics, and nanosensors, etc. [3][4][5][6], as well as the Ga 2 O 3 /GaAs NWs growth will expect many exciting opportunities on nanoscale science and technology [7][8][9][10].…”