Evolution of end-of-range defects in silicon-on-insulator substrates

Cristiano, Fuccio; Dupré, C.; Paul, S.; Ernst, T.; Kheyrandish, H.; Bourdelle, K.K.; Lerch, W.

doi:10.1016/j.mseb.2008.08.018

Cited by 6 publications

(5 citation statements)

References 8 publications

(22 reference statements)

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“…5,6 This means that in the experiment, even if you adjust the implantation parameters to leave a crystal seed in the middle of the fin body, it will be populated by a large number of Si selfinterstitial defects, which could influence the quality of regrowth. In order to reproduce more accurately the experimental situation, we have repeated the previously described MD simulation but introducing Si self-interstitial atoms within the initial crystal seed to a concentration of 4 Â 10 21 cm À3 (of the order of residual defect concentrations at typical implant doses).…”

Section: Resultsmentioning

confidence: 99%

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Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Marqués

Pelaz

Santos

et al. 2012

Journal of Applied Physics

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We use molecular dynamics (MD) simulation techniques to study the regrowth of nanometric multigate Si devices, such as fins and nanowires, surrounded by free surfaces and interfaces with amorphous material. Our results indicate that atoms in amorphous regions close to lateral free surfaces or interfaces rearrange at a slower rate compared to those in bulk due to the discontinuity of the lateral crystalline template. Consequently, the recrystallization front which advances faster in the device center than at the interfaces adopts new orientations. Regrowth then proceeds depending on the particular orientation of the new amorphous/crystal interfaces. In the particular case of (110) oriented fins, the new amorphous/crystal interfaces are aligned along the (111) direction, which produces frequent twining during further regrowth. Based on our simulation results, we propose alternatives to overcome this defected recrystallization in multigate structures: device orientation along (100) to prevent the formation of limiting {111} I amorphous/crystal interfaces and presence of a crystalline seed along the device body to favor regrowth perpendicular to the lateral surfaces/interfaces rather than parallel to them. (C) 2012 American Institute of Physics. [doi :10.1063/1.3679126

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Section: Resultsmentioning

confidence: 99%

“…Only some defects remain beyond the initial amorphous/crystal (a/c) interface. [5][6][7] However, in the case of nanometric multigate devices, regrowth is not as straightforward as in bulk Si due to the presence of lateral free surfaces or interfaces with amorphous SiO 2 (see Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Marqués

Pelaz

Santos

et al. 2012

Journal of Applied Physics

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“…In the case of conventional planar devices, SPER produces the complete regrowth of the amorphous region up to the Si surface, with good crystalline quality and high dopant activation level in the regrown layer [109,115,116]. However, in the case of 3D nanometric multigate devices, SPER is not as straightforward as in bulk Si [87,[117][118][119].…”

Section: Cmd Modelsmentioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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“…1 Reduced short channel effects, improved speed, and reduced power consumption in complementary metal oxide semiconductor devices are all achievable with these substrates. 2 An additional advantage of SOI consists of the possibility to reduce the number of silicon interstitials created during the source/drain implant steps by recombining them at the buried Si-SiO 2 interface, which results in a better control of several deleterious effects, such as extended defect formation, 3,4 dopant deactivation, 5 and transient enhanced diffusion ͑TED͒. 6 The behavior of the buried Si-SiO 2 interface with respect to the implant-generated interstitial excess has been a longstanding subject of research and, with the exception of a few reports suggesting that the interface has no impact at all on dopant diffusion 7 or acts has a reflective boundary for interstitials, 8 the vast majority of previous reports shows that it behaves as an efficient sink for interstitials.…”

Section: Introductionmentioning

confidence: 99%

“…6 The behavior of the buried Si-SiO 2 interface with respect to the implant-generated interstitial excess has been a longstanding subject of research and, with the exception of a few reports suggesting that the interface has no impact at all on dopant diffusion 7 or acts has a reflective boundary for interstitials, 8 the vast majority of previous reports shows that it behaves as an efficient sink for interstitials. [3][4][5][6][9][10][11] Several physical phenomena have been investigated in these studies which give a more or less direct evidence of the interstitial recombination at the Si-SiO 2 interface. In some cases, a quantitative estimation of the recombination length for interstitials at the interface L int has also been given.…”

Section: Introductionmentioning

confidence: 99%

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Bazizi

Pakfar

Tavernier

et al. 2010

Journal of Applied Physics

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The effect of the buried Si-SiO 2 interface on the transient enhanced diffusion ͑TED͒ of boron in silicon on insulator ͑SOI͒ structures has been investigated. To this purpose, boron marker layers were grown by chemical vapor deposition on Si and SOI substrates and implanted under nonamorphizing conditions with 40 keV Si + ions. The experimental results clearly confirm that the Si-SiO 2 interface is an efficient trap for the Si interstitial atoms diffusing out of the defect region. Based on these experiments, existing models for the simulation of B TED in silicon have been modified to include an additional buried recombination site for silicon interstitials. The simulation results provide an upper limit of ϳ5 nm for the recombination length of interstitials at the Si-SiO 2 interface.

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Evolution of end-of-range defects in silicon-on-insulator substrates

Cited by 6 publications

References 8 publications

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

Improved physical models for advanced silicon device processing

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

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