Evolution of electronic structure of few-layer phosphorene from angle-resolved photoemission spectroscopy of black phosphorous

Ehlen, Niels; Senkovskiy, Boris V.; Fedorov, Alexander; Perucchi, A.; Pietro, P. Di; Sanna, Antonio; Profeta, G.; Petaccia, L.; Grüneis, A.

doi:10.1103/physrevb.94.245410

Cited by 45 publications

(33 citation statements)

References 63 publications

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“…Prior to Cs deposition we recorded ARPES of the pristine BP crystal to confirm the surface quality and the orientation. We have obtained results in agreement with those published earlier [2,22]. Figures 1(c) and 1(d) show ARPES spectra (taken at hν = 21 eV with a horizontal entrance slit on the analyzer) after maximum deposition of Cs.…”

Section: Angle-resolved Photoemission Spectroscopysupporting

confidence: 90%

“…ARPES was performed at the BaDElPh beamline [23] of the Elettra synchrotron in Trieste, Italy, with linear s and p polarization at temperatures of 20 K. The crystal surfaces were prepared in situ in a vacuum better than 5 × 10 −11 mbar and at liquid-He temperatures by cleaving with a top post inside the analysis chamber [22]. Immediately after the cleave, we determined the high-symmetry directions through lowenergy electron diffraction.…”

Section: Angle-resolved Photoemission Spectroscopymentioning

confidence: 99%

“…The region of the inverted bands is accurately mapped and clearly shows the overlapping surface and bulk states. A quantitative TB model developed for pristine BP [22] is adapted for doped BP. It demonstrates the requirements for protecting the band crossings imposed on crystal symmetry.…”

Section: Introductionmentioning

confidence: 99%

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Direct observation of a surface resonance state and surface band inversion control in black phosphorus

et al. 2018

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We report a Cs-doping-induced band inversion and the direct observation of a surface resonance state with an elliptical Fermi surface in black phosphorus (BP) using angle-resolved photoemission spectroscopy. By selectively inducing a higher electron concentration (1.7 × 10 14 cm −2 ) in the topmost layer, the changes in the Coulomb potential are sufficiently large to cause surface band inversion between the parabolic valence band of BP and a parabolic surface state around the point of the BP Brillouin zone. Tight-binding calculations reveal that band gap openings at the crossing points in the two high-symmetry directions of the Brillouin zone require out-of-plane hopping and breaking of the glide mirror symmetry. Ab initio calculations are in very good agreement with the experiment if a stacking fault on the BP surface is taken into account. The demonstrated level of control over the band structure suggests the potential application of few-layer phosphorene in topological field-effect transistors.

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Section: Angle-resolved Photoemission Spectroscopysupporting

confidence: 90%

Section: Angle-resolved Photoemission Spectroscopymentioning

confidence: 99%

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Direct observation of a surface resonance state and surface band inversion control in black phosphorus

et al. 2018

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“…Furthermore, angle resolved photoemission spectroscopy (ARPES) have so far been applied to get an information of hole bands (valence band) of bulk BP [25][26][27] as well as its band gap variation by alkali metal doping [28][29]. However, the electrons (holes) excited in the conduction (valence) band and their carrier dynamics have not yet been clarified.…”

Section: Introductionmentioning

confidence: 99%

Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material

Nurmamat

Ishida

Yori

et al. 2018

Sci Rep

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Transient electron-hole pairs generated in semiconductors can exhibit unconventional excitonic condensation. Anisotropy in the carrier mass is considered as the key to elongate the life time of the pairs, and hence to stabilize the condensation. Here we employ time- and angle-resolved photoemission spectroscopy to explore the dynamics of photo-generated carriers in black phosphorus. The electronic structure above the Fermi level has been successfully observed, and a massive-and-anisotropic Dirac-type dispersions are confirmed; more importantly, we directly observe that the photo-carriers generated across the direct band gap have the life time exceeding 400 ps. Our finding confirms that black phosphorus is a suitable platform for excitonic condensations, and also open an avenue for future applications in broadband mid-infrared BP-based optoelectronic devices.

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“…Regarding the heterointerface (taking region 2 and 1, for example), calculations and transport measurement have showed that six-layer BP has a bandgap of ≈0.68 eV. [36,37] In comparison, a layer number of 11 will result in BP's bandgap below 0.4 eV, [34] www.advelectronicmat.de difference of BP sheets with similar thickness difference has also been revealed from electrical transport measurement. [35] This difference in a heterojunction is likely to give rise to an obvious current rectification behavior.…”

Section: Electrical Properties Of Bp Heterojunction Diodementioning

confidence: 99%

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Wang

Huang

Tan

et al. 2017

Adv Elect Materials

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complicated split-gates structure and suffer from nonabrupt junction interface due to the divergence of static electric field, limiting their practical applications. 2D lateral homojunctions can be achieved by selective chemical doping as well, as in few-layer MoS 2 [7] and BP cases. [17,18] In addition to homojunctions, heterojunctions have recently been under intense study to extend further the frontiers of 2D materials for electronic and optoelectronics. Particularly, by vertically stacking together flakes of different 2D materials, the so-called van der Waals heterojunction is formed which gathered extensive attention by offering a vast number of candidate structures for high-performance optoelectronic applications. [3,8,11,15,19,20] Nevertheless, the construction of this structure usually requires a dry/wet transfer technique that complicates the fabrication process. [21] Besides, it also tends to suffer from contaminants and bubbles introduced during the transfer, resulting in unwanted defects at the interface. [11] In contrast to vertical heterojunctions, lateral heterojunctions composed of p-and n-type TMDCs semiconductors are also explored where disparate materials can be grown along the edges of the previously grown flakes in the epitaxy process. [22][23][24] Yet, this strategy is severely challenged by the control of large-area uniform growth and the high yield of clean junction interface. As well known, an inherent nature of 2D materials is their thickness-(or layer-number-) dependent bandgaps. [25] Such dependence implies energy bands discontinuities at the interface of different-layer-number films, forming spontaneously a lateral heterojunction distinct from the conventional ones. [26][27][28][29] The study on this kind of structure is likely to expand the realms of 2D materials diverse applications but few works have been done. [26,28,29] Recently, few-layer black phosphorus has been rediscovered as a novel promising 2D semiconductor for nextgeneration nanoelectronic and optoelectronic devices due to its direct bandgap, ambipolar conduction, anisotropic nature, and a high field-effect hole mobility. [30][31][32][33] Especially, BP has a largely adjustable direct thickness-dependent bandgap ranging from 2.0 eV for monolayer to 0.3 eV for its bulk form, [34] which bridges the bandgap space between gapless graphene and large gap TMDCs by covering the mid-infrared to near-infrared wavelengths, leading to new electronic and optoelectronic devices. [33] In this work, we experimentally demonstrate a gate-tunable all-BP lateral heterojunction diode with thickness-induced bandgap difference for high-performance photovoltaic application, Recently, both lateral and vertical p-n junctions have been realized in 2D materials using various strategies, with a number of works on exploring the potential of lateral heterojunctions resulting from thickness-modulated bandgaps at the interface. Here, electrically tunable all-black-phosphorus (BP) lateral heterojunction diodes, without the need of split-gating or sele...

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Evolution of electronic structure of few-layer phosphorene from angle-resolved photoemission spectroscopy of black phosphorous

Cited by 45 publications

References 63 publications

Direct observation of a surface resonance state and surface band inversion control in black phosphorus

Direct observation of a surface resonance state and surface band inversion control in black phosphorus

Prolonged photo-carriers generated in a massive-and-anisotropic Dirac material

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

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