2003
DOI: 10.1080/0141861031000061701
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Evolution of dislocation substructure in vapour-deposited lead films on glass substrates

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Cited by 3 publications
(2 citation statements)
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“…In the case of the annealed sample the dislocation density from either method is in close agreement, which is in accordance with the µ value of 2.25, indicating a random dislocation distribution. It was earlier shown by Chatterjee and Sen Gupta [28] that the WA and Williamson-Smallman formalisms yield different values of ρ compared to the modified WA procedure for more correlated dislocation distributions µ < 1.…”
Section: Resultsmentioning
confidence: 96%
“…In the case of the annealed sample the dislocation density from either method is in close agreement, which is in accordance with the µ value of 2.25, indicating a random dislocation distribution. It was earlier shown by Chatterjee and Sen Gupta [28] that the WA and Williamson-Smallman formalisms yield different values of ρ compared to the modified WA procedure for more correlated dislocation distributions µ < 1.…”
Section: Resultsmentioning
confidence: 96%
“…Experimental results indicate that the stability of FCC Ti in thin films is related to the film thickness, surface orientation, and temperature [9][10][11][12][13][14] . The HCP to FCC phase transformation in Ti is dominated by the high density of dislocations and twins introduced by ball milling but not stacking faults 15 . Another experiment observed small amounts of FCC Ti after ball milling Ti-Al powders.…”
Section: Introductionmentioning
confidence: 98%