Evolution in IGBT's protection against short circuit behaviors by gate-side circuitry

Pagano, R.; Raciti, A.

doi:10.1109/isie.2002.1025855

Cited by 6 publications

(2 citation statements)

References 5 publications

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“…This power supply voltage is not available in this application. Another method shown in Figure 2 employs a test power switch with its area proportionally scaled to the main switch [13]. By connecting the two power switches in parallel, the current in the test switch follows the same pattern with the main switch drain current.…”

Section: Short Circuit Behavior and Protection Schemesmentioning

confidence: 99%

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

Zuo

Islam

Huque

et al. 2010

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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In recent years, the rapid increase in the market for hybrid electric vehicles has generated great demand for low-cost, high-volume, high-temperature power converters that can work in harsh environment (temperature ≥ 150°C) conditions. Most of the commercially available power semiconductor devices and associated control electronics are rated for maximum of 85°C ambient temperature. Under this circumstance, wide bandgap (WBG) semiconductors have become a better alternative due to their ability to operate at much higher temperatures (≥500°C) than conventional bulk silicon based devices. As with any other power devices, SiC switches also require fault detection and protection mechanisms for their reliable application to real systems. One severe fault situation is the short circuit at the load end, which can cause very high surge currents that flow through the power switches. Quick detection and removal of the short circuit fault current by external circuitry is required to protect the power switch as well as the power converter module. This work presents a high-temperature (≥200°C), high-voltage short circuit protection (SCP) for SiC power devices. The circuit is designed using a resistor sensing method to provide protections for both “normally ON” and “normally OFF” SiC FET switches. A rail-to-rail input comparator is employed to ensure that the circuit operates under different power supply levels. The prototype circuit is implemented using a 0.8-micron, 2-poly, and 3-metal BCD-on-SOI process. The die size for the protection circuit is 0.52 mm2 (845 μm × 612 μm). The circuit has been successfully tested up to 200°C ambient temperature under power supplies ranging from 10 V to 30 V without any heat sink or cooling mechanism.

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Section: Short Circuit Behavior and Protection Schemesmentioning

confidence: 99%

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

Zuo

Islam

Huque

et al. 2010

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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show abstract

“…Under fault-free operations, over-current detections usually require high sensing accuracy since a small percentage of current change at high current or marginal overcurrent operation can induce large inverter loss change [6,7]. Switching power semiconductors' tolerable shortcircuit time is usually several microseconds under a shortcircuit fault condition.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Over-Current Sensing for Traction Inverters

Niu

2021

Active and Passive Electronic Components

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The over-current condition for a traction inverter can indicate flaws on control algorithms, interference on logic signals, hardware aging, or hardware misconduct. Thus, proper detection of over-current conditions during inverter operation is a critical item for inverter development and product validation. This paper reviews several widely used over-current detection methods and a few theoretically approved over-current detection methods. The main focus of this review includes the sensing bandwidth, sensing accuracy, and implementation complexity of the studied over-current detection methods. The advantages of those widely used methods and the application requirements for the theoretically and prototypingly approved methods are concluded by this review.

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A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters

Lü

Sharma²

2008

2008 IEEE Industry Applications Society Annual Meeting

190

186

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Evolution in IGBT's protection against short circuit behaviors by gate-side circuitry

Cited by 6 publications

References 5 publications

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches

A Comparative Study of Over-Current Sensing for Traction Inverters

A Literature Review of IGBT Fault Diagnostic and Protection Methods for Power Inverters

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