2014
DOI: 10.1007/s11661-014-2637-y
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Evolution and Stability of a Nanocrystalline Cu3Ge Intermetallic Compound Fabricated by Means of High Energy Ball Milling and Annealing Processes

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Cited by 4 publications
(3 citation statements)
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“…During the charge process, all the diffraction patterns (d,e,f in Figure b,c) correspond to Cu 3 Ge also. These results provide clear evidence of the inertness of Cu 3 Ge with Li ions during charge/discharge process, and the result is similar to previous reports . Thus, the Cu 3 Ge could function as an electrical highway, guarantee the fast electron transportation during cycling, making the hybrid Cu 3 Ge/Ge/C composites more electrochemically active.…”
Section: Resultssupporting
confidence: 90%
“…During the charge process, all the diffraction patterns (d,e,f in Figure b,c) correspond to Cu 3 Ge also. These results provide clear evidence of the inertness of Cu 3 Ge with Li ions during charge/discharge process, and the result is similar to previous reports . Thus, the Cu 3 Ge could function as an electrical highway, guarantee the fast electron transportation during cycling, making the hybrid Cu 3 Ge/Ge/C composites more electrochemically active.…”
Section: Resultssupporting
confidence: 90%
“…Due to the potential importance of Cu-Ge alloys, and in particular the intermetallic Cu 3 Ge, as candidate materials for next-generation interconnects in semiconductor devices, we have studied in detail the Cu-Ge electrodeposition process from an alkaline tartrate-complexing electrolyte, 6 and proposed an induced co-deposition mechanism. So far, Cu 3 Ge alloys have been grown by dry techniques such as PVD and CVD, [7][8][9] which in some cases are operated at relatively high temperatures, hindering integration into the semiconductor fabrication process and limiting the type of substrates that could be used. Electrodeposition in contrast operates at low temperatures (< 100…”
mentioning
confidence: 99%
“…So far, Cu 3 Ge alloys have been grown by dry techniques such as PVD and CVD, [7][8][9] which in some cases are operated at relatively high temperatures, hindering integration into the semiconductor fabrication process and limiting the type of substrates that could be used. Electrodeposition in contrast operates at low temperatures (< 100 • C) while providing a uniform coverage and excellent gap filling ability at the deep nm scale, as evidenced by the success and the miniaturization of the damascene technology for fabricating conventional Cu interconnects.…”
mentioning
confidence: 99%