EVIDENCE THAT SnTe IS A SEMICONDUCTOR

Kafalas, J. A.; Brebrick, R. F.; Strauss, A. J.

doi:10.1063/1.1753977

Cited by 87 publications

(67 citation statements)

References 4 publications

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“…On the basis of measurements of R H and S in the range of 4,2-300 К the authors of (Allgaier & Sheie, 1961) suggested a model of two valence bands for SnTe, which was further developed in (Brebrick et al,1962;Sagar & Miller, 1962;Brebrick, 1963;Brebrick & Strauss, 1963;Kafalas et al,1964;Andreev, 1967;Kaydanov et al, 1967;Rogers, 1968;Rabii, 1969). Analyzing the literature data on the SnTe band structure one can note two circumstances.…”

Section: New Model Of the Valence Bandmentioning

confidence: 99%

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Рогачева¹

2012

Stoichiometry and Materials Science - When Numbers Matter

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Section: New Model Of the Valence Bandmentioning

confidence: 99%

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Рогачева¹

2012

Stoichiometry and Materials Science - When Numbers Matter

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“…Lead chalcogenides and their alloys can be engineered to exhibit high ZTs; however, environmental concern regarding Pb prevents their deployment in large-scale applications (6)(7)(8)(9)(10). Tin telluride (SnTe), a lead-free IV-VI narrow band-gap semiconductor has not been considered favorably as a good thermoelectric material because of its low ZT due to the relatively low Seebeck coefficient and high electronic thermal conductivity caused by intrinsic Sn vacancies (11)(12)(13), although SnTe has been used to alloy with other tellurides for better TE properties (14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26). Even though there has been no real success in achieving good TE properties of lead-free SnTe, the similarity between the electronic band structure of SnTe and that of PbTe and PbSe (27)(28)(29)(30)(31) suggests it has the potential to be a good TE material, especially given the two valence bands (light-hole and heavy-hole bands) that contribute to the hole density of states.…”

Section: G Ood Thermoelectric (Te) Materials Should Not Only Have Highmentioning

confidence: 99%

High thermoelectric performance by resonant dopant indium in nanostructured SnTe

Zhang

Liao

Lan

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

648

765

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From an environmental perspective, lead-free SnTe would be preferable for solid-state waste heat recovery if its thermoelectric figure-of-merit could be brought close to that of the leadcontaining chalcogenides. In this work, we studied the thermoelectric properties of nanostructured SnTe with different dopants, and found indium-doped SnTe showed extraordinarily large Seebeck coefficients that cannot be explained properly by the conventional two-valence band model. We attributed this enhancement of Seebeck coefficients to resonant levels created by the indium impurities inside the valence band, supported by the firstprinciples simulations. This, together with the lower thermal conductivity resulting from the decreased grain size by ball milling and hot pressing, improved both the peak and average nondimensional figure-of-merit (ZT) significantly. A peak ZT of ∼1.1 was obtained in 0.25 atom % In-doped SnTe at about 873 K.

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“…SnTe has rarely been investigated however, because of our inability to control its very high level of intrinsic Sn vacancies (10 20 to 10 21 cm À3 ), which leads to a low Seebeck coefficient and a high thermal conductivity. 17,18 Other concerns about SnTe are its small band gap ($0.18 eV at 300 K) and the large energy separation (0.3-0.4 eV at 300 K) between its light and heavy hole bands, which signicantly suppress the contribution of heavy holes to the Seebeck coefficient at high temperature. [19][20][21] Attempts at modifying the valence band structure of SnTe to improve its ZT value have been made recently.…”

Section: -15mentioning

confidence: 99%

Lead-free SnTe-based thermoelectrics: enhancement of thermoelectric performance by doping with Gd/Ag

et al. 2016

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SnTe, with the same rock-salt structure as PbTe, is a potentially attractive thermoelectric material. Pristine SnTe has poor thermoelectric performance because of its very high hole concentration resulting from intrinsic Sn vacancies, which leads to a high thermal conductivity and a low Seebeck coefficient. In this work, the thermoelectric properties of SnTe were modified by doping with different contents of gadolinium and silver. It is found that SnTe doped with optimal gadolinium (i.e. Gd0.06Sn0.94Te) exhibited extraordinarily low lattice thermal conductivity that is close to the theoretical minimum. The drastic reduction of lattice thermal conductivity is attributed to the formation of nanoprecipitates, which strongly scatter phonons by mass fluctuation between a second phase and matrix coupled with mesoscale scattering via grain boundaries. Further doping Gd0.06Sn0.94Te with Ag leads to a higher Seebeck coefficient due to the decreased carrier concentration and adjusted phase composition. Optimal Ag doping leads to a 3 times and 2 times enhancement of the figure of merit (ZT) in comparison with SnTe and Gd0.06Sn0.94Te, respectively, i.e. a ZT of ∼1.1 was obtained for 11 atom% Ag-containing Gd0.06Sn0.94Te at 873 K.

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EVIDENCE THAT SnTe IS A SEMICONDUCTOR

Cited by 87 publications

References 4 publications

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

Nonstoichiometry and Properties of SnTe Semiconductor Phase of Variable Composition

High thermoelectric performance by resonant dopant indium in nanostructured SnTe

Lead-free SnTe-based thermoelectrics: enhancement of thermoelectric performance by doping with Gd/Ag

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