Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique

Nagar, S.; Chakrabarti, Subhananda

doi:10.1016/j.jlumin.2012.12.043

Cited by 18 publications

(3 citation statements)

References 22 publications

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“…The formation of secondary electrons limits its efficiency, and in situ monitoring of the dose in PIII becomes difficult [7]. The details are given elsewhere [8]. An n‐type ZnO layer was deposited using pulsed‐lased deposition at 650°C with an oxygen pressure of 5 × 10 −2 mbar.…”

Section: Methodsmentioning

confidence: 99%

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UV electroluminescence from p‐ZnO:P/n‐ZnO homojunction diode

Nagar

Chakrabarti

2014

Electron. lett.

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The reliability of p-type ZnO thin films obtained by phosphorus implantation, using plasma-immersion ion implantation, followed by rapid thermal annealing is reported. Also reported is the fabrication of a ZnO-based homojunction light-emitting diode. Low-temperature photoluminescence measurements after six months showed a dominant free electron-to-acceptor peak for samples annealed at 900 and 1000°C , confirming the formation of p-type films. Room-temperature electroluminescence spectra for the p-ZnO:P/n-ZnO homojunction diode revealed ultraviolet (UV) emission at 3.18 eV; however, the dominant peak was observed at 1.8 eV because of a deep-level defect peak. Achieving dominant UV emission requires further optimisation of the device structure.

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Section: Methodsmentioning

confidence: 99%

“…1 shows the crosssectional and top views of the fabricated device. Results and discussion: A detailed description of the fabrication of p-type ZnO using phosphorus doping has been described elsewhere [8]. As mentioned earlier, stability is a major issue for p-type ZnO, because of the low solubility of dopants and the self-compensating nature of ZnO.…”

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confidence: 99%

UV electroluminescence from p‐ZnO:P/n‐ZnO homojunction diode

Nagar

Chakrabarti

2014

Electron. lett.

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“…We have previously reported on p-type ZnO films implanted with phosphorus by plasma immersion ion implantation (PIII). 18,19 The same approach has extended to ZnMgO thin films in an attempt to achieve reliable and reproducible p-type films. Although a dominating acceptor peak was not detected, the implantation of phosphorus ions into Zn 1Àx Mg x O by PIII shows promise.…”

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confidence: 99%