Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

Saha, Sourav; Nagar, S.; Chakrabarti, Subhananda

doi:10.1063/1.4893138

Cited by 23 publications

(4 citation statements)

References 29 publications

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“…The FWHM values of the NZO thin films decreased from 0.232° to 0.202° with increasing N concentration up to 6 at. %, indicating an improvement in the crystallinity of the films . The crystallite sizes calculated using Scherrer's formula for the NZO thin films with 0, 3, 6, 9, and 12 at.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Nitrogen‐doped Zinc Oxide Thin Films Grown on Muscovite Mica Substrates Using Sol–Gel Process

Kim

Leem

2015

Bulletin Korean Chem Soc

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Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Nitrogen‐doped Zinc Oxide Thin Films Grown on Muscovite Mica Substrates Using Sol–Gel Process

Kim

Leem

2015

Bulletin Korean Chem Soc

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“…Furthermore, the A°X peak persisted up to 300 K, making these films potential candidates for room-temperature optoelectronic applications. With increase in temperature, the intensity of the peaks reduced and the peaks broadened; this decrease in the luminescence intensity is described by the Arrhenius equation: where I 0 is the initial integrated PL peak intensity at T = 18 K, E A is the acceptor activation energy, and C is the peak fitting constant. By use of this equation, E A for the FA peak was calculated to be around 64 ± 0.35, 137 ± 0.09, and 55 ± 0.37 meV for samples C, D, and E, respectively.…”

Section: Results and Discussionmentioning

confidence: 99%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species

Sushama¹,

Murkute²,

Ghadi

et al. 2019

ACS Appl. Electron. Mater.

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The modulating nature of doping in oxide-based semiconductors has always been an area of interest as it resulted in numerous technological developments. On working with ZnO, the principal challenge faced in its realistic utilization as an optoelectronic material lies in its default n-type of nature due to the presence of native defects. Thus, achieving p-type behavior has been a tedious job, and considerable efforts have been made over the past couple of decades. The incorporation of monodopants has yielded p-type ZnO of unstable reliability, thus spurring research on codoping technology. In present study, we examined the effects of boron implantation time on the structural and optical properties of phosphorus-doped ZnO thin films, with the objective of realizing a material ideal for optoelectronic applications. Furthermore, we investigated the effects of annealing temperature on the behavior of codoped samples. Field emission gun scanning electron microscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, and conductive atomic force microscopy results evidenced that boron implantation improved the solubility of the acceptor atom (i.e., phosphorus), which in turn improved the films’ acceptor-based optical emission. The various spectral data also indicated the presence and location of boron atoms in the films. Moreover, we realized a shallow acceptor energy level, with the minimum value being 55±0.37 meV from the valence band level. The acceptor-bound exciton peak was observed up to 300 K, indicating the feasibility of room temperature applications of these films. In addition, compared with phosphorus doping, codoping increased the photoluminescence intensity of the acceptor peaks. The codoped samples also exhibited stability in the acceptor behavior with the signature of the acceptor bound peaks observed over the span of 13 months.

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“…An emission peak (S) at 3.36 eV, attributed to the ZnO-like composition also present with ZnMgO for sample annealed at 700°C. This peak disappeared with increasing annealing temperature [26,27]. Apart from the excitonic emissions at 3.45 and 3.52, 3.36 eV, emission peaks at 3.33, 3.23 eV were observed due to the defect level emission from samples, as could be seen in Fig.…”

Section: Morphological Propertiesmentioning

confidence: 87%

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

Saha

Pandey

Nagar

et al. 2015

J Mater Sci: Mater Electron

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p-type nitrogen doped Zn 1-x Mg x O (x = 0.15) thin films were prepared on n-type silicon substrates by RF sputtering. Plasma-immersion-ion technique and rapid-thermal process were used to implant nitrogen and annealing (700-1000°C) of these films respectively. Annealed samples at 700, 800, 900 and 1000°C showed effective improvement of the structural and optical properties. X-ray diffraction spectra showed improvement in \002[ orientation of films with increase in annealing temperatures. In Raman spectra, the peak at 436 cm -1 corresponds to E 2 high phonons mode of ZnMgO wurtzite structure and FWHM of this peak decreases with increase in annealing temperature, indicating improvement in crystalline quality. The scanning electron microscopy results demonstrate that nitrogen-implanted ZnMgO film annealed at 1000°C has better morphology in comparison to other films. Low-temperature (15 K) photoluminescence measurements revealed acceptorbound exciton peak at 3.45 eV and donor-bound exciton peak around 3.52 eV. Increased intensity of acceptor-bound exciton peak with increasing annealing temperature proves that nitrogen implantation and subsequent annealing increase the acceptor concentration in the film, indicating tendency for p-type conduction at higher annealing temperature. The film annealed at 1000°C was observed to produce only acceptor-bound exciton emission and no donor-bound exciton emission was occurred. Hall-effect measurements showed p-type conductivity for annealed films in temperature range at 800-1000°C. The acceptor level at 3.45 eV in PL spectra is responsible for this p-type conduction in these films. The highest hole concentration of 1.91 9 10 15 cm -3 has been achieved for film annealed at 1000°C.

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Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn0.85Mg0.15O thin films

Cited by 23 publications

References 29 publications

Structural and Optical Properties of Nitrogen‐doped Zinc Oxide Thin Films Grown on Muscovite Mica Substrates Using Sol–Gel Process

Structural and Optical Properties of Nitrogen‐doped Zinc Oxide Thin Films Grown on Muscovite Mica Substrates Using Sol–Gel Process

Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species

Effect of annealing temperature on optical and electrical properties of nitrogen implanted p-type ZnMgO thin films

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